Datasheet > JBL102Y

JBL102Y

更新时间： 2024-11-20 17:01:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	557K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JBL102Y 数据手册

JBL102Y

100V 2.7mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

100

3.0

Unit

•

Ultra-low R_DS(ON)

•

Ultra-low R_DS(ON)

•

Low Gate Charge

•

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

•

100% UIS Tested, 100% R_gTested

•

206

2.7

•

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

•

Halogen-free and RoHS-compliant

•

Applications

•

Motor Driving in Power Tool, E-vehicle, Robotics

Power Management in C mputing, CE IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Power Management in Telecom., Industrial Automation, CE

L ad Switching, Quick/Wir less Charging, Motor Drivi g

PowerJE^®10x12 Top View

PowerJE^®10x12 Bottom View

Drain

Gate

Source

Pins 2-8

Ordering Information

T_J(°C)

Device

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JBL102Y

TOLL

BL102Y

-55 to 150 13-inch Reel

2000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

206

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

130

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

824

E_AS

600

T_C= 25°C

300

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

120

T_J, T_STG

Junction & Storage Temperature Range

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 50V

I_D= 20A

100

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 1 of 6

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