生命周期: | Transferred | 包装说明: | TO-3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 8.35 | 最大集电极电流 (IC): | 20 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 150 | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 认证状态: | Qualified |
参考标准: | MIL-19500 | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6298 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR |
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JANTXV2N6299 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR |
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JANTXV2N6300 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR |
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JANTXV2N6301 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR |
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JANTXV2N6306 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 8A I(C) | TO-3 |
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JANTXV2N6308 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |
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JANTXV2N6338 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3 |
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JANTXV2N6340 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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JANTXV2N6341 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-3 |
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JANTXV2N6350 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR |
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