Datasheet > JANTXV1N6509

JANTXV1N6509

更新时间： 2024-01-12 21:28:25

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	185K
描述
Trans Voltage Suppressor Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTXV1N6509 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	DIP	针数：	14
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.45
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e0
认证状态：	Qualified	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

JANTXV1N6509 数据手册

1N6509

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to

the positive side of the power supply line and to ground (see Figure 1). An external

TVS diode may be added between the positive supply line and ground to prevent over-

voltage on the supply rail. They may also be used in fast switching core-driver

applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

14-PIN Ceramic DIP

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

•

Hermetic Ceramic Package

Isolated Diodes To Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 60 V at 10 µA

Low Leakage I_R< 100nA at 40 V

Computer I/O Ports

LAN

Low Capacitance C < 8.0 pF

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20 µs

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6509 for a JANTX screen.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

14-PIN Ceramic DIP

•

Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25^oC

600 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +200^oC

Weight 2.05 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of package

Carrier tubes; 25 pcs (standard)

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.8 mW/^oC above +25^oC

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified

MAXIMUM

REVERSE

RECOVERY TIME

trr

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

RECOVERY TIME

I = I_R= 200 mA

C_t

i = 20 mA

I = 100 mA

I = 500 mA

V_R= 0 V

F = 1 MHz

I = 500 mA

R = 100 ohms

(Note 1)

V_R= 40 V

µA

PART

1^NN^U6^M5^B0^E9^R

1^V.5

0.1

8.0

NOTE 1: Pulsed: P_W= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

Microsemi

Page 1

5-03-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

下载PDF

与JANTXV1N6509相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6510	MICROSEMI	获取价格	Rectifier Diode,
JANTXV1N6511	NSC	获取价格	DIODE UNIDIRECTIONAL, 7 ELEMENT, SILICON, TVS DIODE, DIP-14, Transient Suppressor
JANTXV1N6511	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 7 Element, Silicon, DIP-14
JANTXV1N6512	VMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 1500V V(RRM), Silicon,
JANTXV1N6512	SSDI	获取价格	1.5 A, 1.5 kV Ultrafast Recovery High Voltage Rectifier
JANTXV1N6512U	VMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 1500V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N6513	VMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 2000V V(RRM), Silicon,
JANTXV1N6513	SSDI	获取价格	1.5 A, 2 kV Ultrafast Recovery High Voltage Rectifier
JANTXV1N6513U	VMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 2000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N6513US	VMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 2000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

与JANTXV1N6509相关文章

REF70数据手册解读：高精度电压参考源的全面剖析
2024-07-08

4
解析30211801数据手册：PCB端子排MKDSV 5/3-9.5
2024-07-08

3
UL248-14数据手册深度解读：微型保险丝的全面剖析
2024-07-08

5
BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

18

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N6509

JANTXV1N6509 技术参数

JANTXV1N6509 数据手册

与JANTXV1N6509相关器件

与JANTXV1N6509相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N6509

JANTXV1N6509 技术参数

JANTXV1N6509 数据手册

与JANTXV1N6509相关器件

与JANTXV1N6509相关文章

您还可以找

您在本页遇到什么问题？