5秒后页面跳转
JANTXV1N6517 PDF预览

JANTXV1N6517

更新时间: 2024-06-20 14:02:56
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
3页 150K
描述
0.75 A, 5 kV Ultrafast Recovery High Voltage Rectifier

JANTXV1N6517 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.57
应用:HIGH VOLTAGE FAST RECOVERY POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最大输出电流:0.75 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Qualified参考标准:MIL-19500/575B
最大反向恢复时间:0.07 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END

JANTXV1N6517 数据手册

 浏览型号JANTXV1N6517的Datasheet PDF文件第2页浏览型号JANTXV1N6517的Datasheet PDF文件第3页 
1N6512 – 1N6519  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Series  
Designer’s Data Sheet  
Part Number / Ordering Information 1/  
0.5 – 1.5 AMP  
1,500 V – 10,000 V  
ULTRA FAST RECOVERY  
HIGH VOLTAGE RECTIFIER  
__ __ __  
1N651  
│ └ Screening2/  
__ = None  
TX = TX Level  
TXV = TXV Level  
S = S Level  
FEATURES:  
Fast recovery: 70 nsec maximum  
Package  
__ = Axial  
SMS = Surface Mount Square Tab  
PIV to 10 KV  
Hermetically sealed axial and surface mount package  
Void-free ceramic frit glass construction  
High temperature Category I eutectic metallurgical bond  
Excellent thermal shock performance  
For use in high voltage systems  
Voltage  
2 = 1,500 V  
3 = 2,000 V  
4 = 2,500 V  
5 = 3,000 V  
6 = 4,000 V  
7 = 5,000 V  
8 = 7,500 V  
9 = 10,000 V  
175°C maximum operating temperature  
TX, TXV, and Space level screening available2/  
MAXIMUM RATINGS3/  
Part  
Number  
VRWM  
IFSM  
IO  
tRR  
RƟJL1  
RƟJL2  
RƟJEC  
L = .25ʺ  
L = .25ʺ  
(6.35 mm) (Air)  
tp = 8.3 ms  
4/  
5/  
25°C  
7/  
Conditions  
6/  
(6.35 mm) (Oil Bath)  
Units  
VDC  
A (pk)  
100  
100  
60  
ADC  
1.5  
1.5  
1.0  
1.0  
ADC  
1.0  
ns  
70  
70  
70  
70  
70  
70  
70  
70  
°C/W  
16  
16  
16  
16  
16  
16  
16  
16  
°C/W  
12  
12  
12  
12  
12  
12  
12  
12  
°C/W  
1N6512, SMS  
1N6513, SMS  
1N6514, SMS  
1N6515, SMS  
1N6516, SMS  
1N6517, SMS  
1N6518, SMS  
1N6519, SMS  
1,500  
2,000  
2,500  
3,000  
4,000  
5,000  
7,500  
10,000  
4
4
4
4
5
5
5
5
1.0  
0.65  
0.65  
0.5  
60  
40  
40  
25  
25  
0.75  
0.75  
0.5  
0.5  
0.35  
0.35  
0.5  
MAXIMUM RATINGS3/  
Storage Temperature  
Symbol  
TSTG  
Value  
Unit  
-65 to +200  
-65 to +175  
°C  
°C  
Operating Temperature  
TJ  
Notes:  
Axial  
Surface  
Mount  
Square Tab  
1/ For ordering information, price, and availability – Contact factory.  
2/ Screening based on MIL-PRF-19500/575.Screening flows available on request.  
3/ Unless otherwise specified, TA = 25°C.  
4/ Derate linearly for air (+55°C TA +100°C. IO at TA = +55°C to IO at TA = +100°C), for oil bath  
(+80°C TL +100°C. IO at TL = +80°C to IO at TA = +100°C), and for end cap (+100°C TA ≤  
+125°C. IO at TEC = +100°C to IO at TEC = +125°C).  
5/ Derate linearly for air (+100°C TA +175°C. IO at TA = +100°C to IO = 0A at TA = +175°C), for  
oil bath (+100°C TL +175°C. IO at TL = +100°C to IO = 0A at TA = +175°C), and for end cap  
(+125°C TA +175°C. IO at TEC = +125°C to IO = 0A at TA = +175°C).  
6/ Oil or fluorocarbon fluid with leads heat sunk at specified L.  
7/ RƟJEC is junction to end-cap thermal impedance with “SMS” suffix identification, i.e.,  
1N6512SMS.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0170C  
DOC  

与JANTXV1N6517相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N6517U VMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 2A, 5000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N6517US SSDI

获取价格

Rectifier Diode, 1 Element, 0.75A, 5000V V(RRM), Silicon,
JANTXV1N6518 VMI

获取价格

Rectifier Diode, 1 Element, 0.5A, 7500V V(RRM), Silicon,
JANTXV1N6518 SSDI

获取价格

0.5 A, 7.5 kV Ultrafast Recovery High Voltage Rectifier
JANTXV1N6518US SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, 7500V V(RRM), Silicon,
JANTXV1N6519 VMI

获取价格

Rectifier Diode, 1 Element, 0.5A, 10000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N6519 SSDI

获取价格

0.5 A, 10 kV Ultrafast Recovery High Voltage Rectifier
JANTXV1N6521 VMI

获取价格

Rectifier Diode, 1 Element, 0.5A, 2000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N6522 VMI

获取价格

Rectifier Diode, 1 Element, 0.25A, 2500V V(RRM), Silicon,
JANTXV1N6523 VMI

获取价格

Rectifier Diode, 1 Element, 0.2A, 3000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2