是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | GLASS PACKAGE-2 | Reach Compliance Code: | compliant |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.33 |
Is Samacsys: | N | 应用: | POWER |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 100 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 3 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | 235 | 认证状态: | Qualified |
参考标准: | MIL-19500/420G | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | 20 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV1N5552 | MICROSEMI |
获取价格 |
RECTIFIERS MILITARY APPROVED, 5 AMP, GENERAL PURPOSE | |
JANTXV1N5552 | SENSITRON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, AXIAL PACKAGE-2 | |
JANTXV1N5552 | SEMTECH |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, | |
JANTXV1N5552 | VMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, | |
JANTXV1N5552US | SENSITRON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, MELF-B, 2 PIN | |
JANTXV1N5552US | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2 | |
JANTXV1N5553 | MICROSEMI |
获取价格 |
RECTIFIERS MILITARY APPROVED, 5 AMP, GENERAL PURPOSE | |
JANTXV1N5553 | VMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, | |
JANTXV1N5553 | SEMTECH |
获取价格 |
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, | |
JANTXV1N5553US | SENSITRON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, MELF-B, 2 PIN |