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JANTXV1N5551US PDF预览

JANTXV1N5551US

更新时间: 2024-10-02 13:09:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管军事
页数 文件大小 规格书
2页 80K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2

JANTXV1N5551US 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:GLASS PACKAGE-2Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.33
Is Samacsys:N应用:POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e0
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):235认证状态:Qualified
参考标准:MIL-19500/420G表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:20
Base Number Matches:1

JANTXV1N5551US 数据手册

 浏览型号JANTXV1N5551US的Datasheet PDF文件第2页 

与JANTXV1N5551US相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N5552 MICROSEMI

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RECTIFIERS MILITARY APPROVED, 5 AMP, GENERAL PURPOSE
JANTXV1N5552 SENSITRON

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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, AXIAL PACKAGE-2
JANTXV1N5552 SEMTECH

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Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED,
JANTXV1N5552 VMI

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Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon,
JANTXV1N5552US SENSITRON

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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, MELF-B, 2 PIN
JANTXV1N5552US MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2
JANTXV1N5553 MICROSEMI

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RECTIFIERS MILITARY APPROVED, 5 AMP, GENERAL PURPOSE
JANTXV1N5553 VMI

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Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon,
JANTXV1N5553 SEMTECH

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED,
JANTXV1N5553US SENSITRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, MELF-B, 2 PIN