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JANTXV1N5553US

更新时间: 2024-10-02 14:51:43
品牌 Logo 应用领域
商升特 - SEMTECH 二极管
页数 文件大小 规格书
4页 127K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, GLASS PACKAGE-2

JANTXV1N5553US 技术参数

生命周期:Active包装说明:GLASS PACKAGE-2
针数:2Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.37
应用:POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Qualified参考标准:MIL-19500/420G
最大重复峰值反向电压:800 V子类别:Rectifier Diodes
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

JANTXV1N5553US 数据手册

 浏览型号JANTXV1N5553US的Datasheet PDF文件第2页浏览型号JANTXV1N5553US的Datasheet PDF文件第3页浏览型号JANTXV1N5553US的Datasheet PDF文件第4页 
1N5550US THRU 1N5554US  
Surface Mount Hermetically Sealed  
Standard Recovery Rectifier Diode  
POWER DISCRETES  
Description  
Features  
Quick reference data  
u Low reverse leakage current  
u Hermetically sealed in fused metal oxide  
u Good thermal shock resistance  
u Low forward voltage drop  
VR = 200 - 1000V  
IF  
5.0A  
=
trr = 2µS  
VF = 1.0V  
u Avalanche capability  
These products are qualified to MIL-PRF-19500/420.  
They can be supplied fully released as JAN, JANTX,  
and JANTXV versions.  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25°C unless otherwise specified.  
1N5550US 1N5551US 1N5552US 1N5553US 1N5554US  
Symbol  
Units  
Working Reverse Voltage  
VRWM  
200  
400  
600  
5.0  
800  
1000  
V
Average Forward Current  
@55 °C in free air, lead length  
0.375"  
IF(AV)  
A
A
Repetitive Surge Current  
@55 °C in free air, lead length  
0.375"  
IFRM  
25  
Non-Repetitive Surge Current  
(tp = 8.3mS @ VR & TJMAX  
(tp = 8.3mS, @ VR& 25 °C)  
)
IFSM  
100  
150  
A
Storage Temperature Range  
TSTG  
-65 to +175  
°C  
Revision: August 22nd, 2011  
1
www.semtech.com  

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