Datasheet > JANTXV1N5554US

JANTXV1N5554US

更新时间： 2024-11-16 03:29:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
4页	121K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, GLASS PACKAGE-2

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JANTXV1N5554US 数据手册

1N5550US THRU 1N5554US

Surface Mount Hermetically Sealed

Standard Recovery Rectifier Diode

POWER DISCRETES

Description

Features

Quick reference data

u Low reverse leakage current

u Hermetically sealed in fused metal oxide

u Good thermal shock resistance

u Low forward voltage drop

V_R= 200 - 1000V

I_F

5.0A

t_rr= 2µS

V_F= 1.0V

u Avalanche capability

These products are qualified to MIL-PRF-19500/420.

They can be supplied fully released as JAN, JANTX,

and JANTXV versions.

Absolute Maximum Ratings

Electrical specifications @ T_A= 25°C unless otherwise specified.

1N5550US 1N5551US 1N5552US 1N5553US 1N5554US

Symbol

Units

Working Reverse Voltage

V_RWM

200

400

600

5.0

800

1000

Average Forward Current

@55 °C in free air, lead length

0.375"

I_F(AV)

Repetitive Surge Current

@55 °C in free air, lead length

0.375"

I_FRM

Non-Repetitive Surge Current

(tp = 8.3mS @ V_R& T_JMAX

(tp = 8.3mS, @ V_R& 25 °C)

)

I_FSM

100

150

Storage Temperature Range

T_STG

-65 to +175

°C

Revision: August 22nd, 2011

www.semtech.com

12 3 4

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