5秒后页面跳转
JANS1N6640US PDF预览

JANS1N6640US

更新时间: 2024-11-24 23:01:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管开关
页数 文件大小 规格书
2页 46K
描述
SWITCHING DIODES

JANS1N6640US 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-XELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.15Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-XELF-R2JESD-609代码:e0
最大非重复峰值正向电流:2.5 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:0.3 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Qualified参考标准:MIL-19500/609D
最大重复峰值反向电压:75 V最大反向电流:0.1 µA
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANS1N6640US 数据手册

 浏览型号JANS1N6640US的Datasheet PDF文件第2页 
1N6639US  
1N6640US  
1N6641US  
• 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/609  
• SWITCHING DIODES  
• NON-CAVITY GLASS PACKAGE  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 300 mA  
Derating: 4.6 mA/°C Above T  
Surge Current: IFSM = 2.5A, P = 8.3ms  
= + 110°C  
EC  
w
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.16  
0.71  
4.95  
MIN MAX  
0.070 0.085  
0.019 0.028  
0.165 0.195  
0.003MIN.  
D
F
G
1.78  
0.48  
4.19  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
S
0.08MIN.  
V
V
I
I
T
T
C
BRR  
RWM  
R1  
R2  
FR  
F
RR  
T
= 0  
TYPES  
@ 10 µA  
@ T = +25°C @ T = +150°C  
I
I
I
= 10 mA  
= 10 mA  
= 100  
V
A
A
R
F
R
R
V
=
V
=
R
R
= 200 mA  
V
V
RWM  
RWM  
L
FIGURE 1  
V
V
nA dc  
µA dc  
ns  
ns  
pF  
(pk)  
(pk)  
1N6639US  
1N6640US  
1N6641US  
100  
75  
75  
75  
50  
50  
100  
100  
100  
100  
100  
100  
10  
10  
10  
4.0  
4.0  
5.0  
2.5  
2.5  
3.0  
DESIGN DATA  
CASE: D-5D, Hermetically sealed glass  
case, per MIL-PRF- 19500/609  
FORWARD VOLTAGE:  
LEAD FINISH: Tin / Lead  
V
I
F
F
@
TYPES  
VdC  
mA  
THERMAL RESISTANCE: (R  
50 °C/W maximum at L = 0  
):  
OJEC  
MIN  
MAX  
(PULSED)  
1N6639US  
1.20  
500  
0.54  
0.76  
0.82  
0.87  
0.62  
0.86  
0.92  
1.00  
1
50  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 25  
OJX  
1N6640US  
1N6641US  
100  
200  
POLARITY: Cathode end is banded  
1.10  
200  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
159  

JANS1N6640US 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N6640US MICROSEMI

类似代替

SWITCHING DIODES
JANTX1N6640US MICROSEMI

类似代替

SWITCHING DIODES
JAN1N6640US MICROSEMI

类似代替

SWITCHING DIODES

与JANS1N6640US相关器件

型号 品牌 获取价格 描述 数据表
JANS1N6641 MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, Silicon, SIMILAR TO DO-35, 2 PIN
JANS1N6641 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN
JANS1N6641US MICROSEMI

获取价格

SWITCHING DIODES
JANS1N6641US SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2
JANS1N6642 MICROSEMI

获取价格

COMPUTER SWITCHING DIODE
JANS1N6642 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN
JANS1N6642U MICROSEMI

获取价格

SWITCHING DIODES
JANS1N6642U SENSITRON

获取价格

Small Signal/Switching Diodes
JANS1N6642UB2R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
JANS1N6642UBCC MICROSEMI

获取价格

Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3