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JANS1N6642UBD

更新时间： 2024-11-25 15:35:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
26页 417K
描述
Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3

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JANS1N6642UBD 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：CERAMIC PACKAGE-3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.53其他特性：METALLURGICALLY BONDED
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.8 V
JESD-30 代码：R-CDSO-N3JESD-609代码：e0
最大非重复峰值正向电流：2.5 A元件数量：2
端子数量：3最高工作温度：175 °C
最大输出电流：0.3 A封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Qualified
参考标准：MIL-19500/578E最大重复峰值反向电压：100 V
最大反向恢复时间：0.005 µs子类别：Rectifier Diodes
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANS1N6642UBD 数据手册

 浏览型号JANS1N6642UBD的Datasheet PDF文件第2页浏览型号JANS1N6642UBD的Datasheet PDF文件第3页浏览型号JANS1N6642UBD的Datasheet PDF文件第4页浏览型号JANS1N6642UBD的Datasheet PDF文件第5页浏览型号JANS1N6642UBD的Datasheet PDF文件第6页浏览型号JANS1N6642UBD的Datasheet PDF文件第7页 
INCH-POUND  
MIL-PRF-19500/578M  
24 June 2013  
SUPERSEDING  
MIL-PRF-19500/578L  
19 October 2010  
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 24 September 2013.  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643,  
1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2,  
1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
The JANS1N4148-1 is no longer qualified and is superseded by JANS1N6642. See 6.4.  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein  
shall consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for switching diodes. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
* 1.2 Physical dimensions. See figures 1 (DO-35), 2 (U, US), 3 (UB), 4 (UB2), 5, and 6.  
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.  
V
V
I
I
R
R
R
R
T
BR  
RWM O(PCB)  
FSM  
t =  
p
θJL  
θJEC  
θJA(PCB)  
θJSP  
STG  
& T  
L =  
L = 0  
(1)  
(2)  
(1) (3)  
T =75°  
J
A
Types  
.375 inch  
(9.53 mm)  
(1) (2)  
1/120 s  
(1) (2)  
V (pk) V (pk)  
mA  
300  
300  
300  
300  
A (pk)  
2.5  
°C/W  
150  
°C/W  
40  
°C/W  
250  
250  
250  
250  
°C/W  
°C  
1N6638  
150  
150  
100  
100  
125  
125  
75  
-65 to +175  
-65 to +175  
-65 to +175  
-65 to +175  
1N6638U, 1N6638US  
1N6642  
2.5  
2.5  
150  
150  
1N6642U, 1N6642US  
75  
2.5  
40  
1N6642UB, 1N6642UB2,  
1N6642UB2R, 1N6642UBCA,  
1N6642UBD, 1N6642UBCC  
100  
75  
300  
2.5  
325  
100  
-65 to +200  
1N6643  
75  
75  
50  
50  
300  
300  
2.5  
2.5  
250  
250  
-65 to +175  
-65 to +175  
1N6643U, 1N6643US  
40  
* (1) For temperature-current derating curves, see figures 7 and 8.  
* (2) See figures 9, 10, 11, and 13 for thermal impedance curves. T = +75°C for both axial and Metal Electrode  
A
Leadless Face diodes (MELF) (U, US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm)  
1-layer 1-Oz Cu, horizontal, in still air; pads for U, US = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial  
= .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch  
(≤ 4.75 mm); R  
with a defined PCB thermal resistance condition included, is measured at I = 300 mA dc.  
θJA  
O
(3)  
R
θJSP  
refers to thermal resistance from junction to the solder pads of the UB package.  
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the  
ASSIST Online database at https://assist.dla.mil .  
AMSC N/A  
FSC 5961  
 
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JANS1N6642US MICROSEMI

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JANS1N6642US SENSITRON

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 		Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2
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JANS1N6643U CDI-DIODE

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 		Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2
JANS1N6643U MICROSEMI

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 		SWITCHING DIODES
JANS1N6643U SENSITRON

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 		Small Signal/Switching Diodes
JANS1N6643US MICROSEMI

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 		COMPUTER SWITCHING DIODE
JANS1N6643US SENSITRON

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 		Small Signal/Switching Diodes
JANS1N6660CCT1 INFINEON

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 		35A 45V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N6660CCT1 -

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