是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-254AA | 包装说明: | R-MSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.22 | Is Samacsys: | N |
应用: | ULTRA FAST RECOVERY | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.2 V | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | R-MSFM-T3 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 300 A | 元件数量: | 2 |
相数: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 最大输出电流: | 30 A |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 200 V |
最大反向恢复时间: | 0.035 µs | 子类别: | Rectifier Diodes |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6659R | SENSITRON |
获取价格 |
HERMETIC ULTRAFAST RECOVERY RECTIFIER | |
JAN1N6660 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
JAN1N6660CAT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
JAN1N6660CCT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
JAN1N6660DT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
JAN1N6660R | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-254AA, HERMETIC SEALED, TO | |
JAN1N6660R | SENSITRON |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-254AA, HERMETI | |
JAN1N6660RT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, | |
JAN1N6660T1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, | |
JAN1N6661 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35, |