5秒后页面跳转
捷配首页

Datasheet > JAN1N6117US
JAN1N6117US PDF预览

JAN1N6117US

更新时间： 2024-11-09 18:55:31
品牌 Logo 应用领域
商升特 - SEMTECH 局域网二极管
页数 文件大小 规格书
20页 162K
描述
Trans Voltage Suppressor Diode, 500W, 22.8V V(RWM), Bidirectional, 1 Element, Silicon

阅读下载

中文翻译

获取价格

JAN1N6117US 技术参数

生命周期：Active包装说明：O-XELF-N2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.27Is Samacsys：N
最小击穿电压：27 V击穿电压标称值：30 V
外壳连接：ISOLATED最大钳位电压：43.5 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-XELF-N2
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：1.5 W
认证状态：Qualified参考标准：MIL-19500/516
最大重复峰值反向电压：22.8 V子类别：Transient Suppressors
表面贴装：YES技术：ZENER
端子形式：NO LEAD端子位置：END
Base Number Matches：1

JAN1N6117US 数据手册

 浏览型号JAN1N6117US的Datasheet PDF文件第2页浏览型号JAN1N6117US的Datasheet PDF文件第3页浏览型号JAN1N6117US的Datasheet PDF文件第4页浏览型号JAN1N6117US的Datasheet PDF文件第5页浏览型号JAN1N6117US的Datasheet PDF文件第6页浏览型号JAN1N6117US的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 23 October 1999.  
INCH-POUND  
MIL-PRF-19500/516D  
23 July 1999  
SUPERSEDING  
MIL-S-19500/516C  
20 January 1995  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE  
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,  
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,  
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,  
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,  
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS  
This specification is approved for use within US Army Laboratory  
Command, Department of the Army, and is available for use by all  
Departments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient  
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.  
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:  
P
=
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5  
R
R
A
for derating).  
P
=
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375  
L
inch (9.53 mm) (see figure 6).  
P
PR  
=
500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including  
A and US suffix versions)) at t = 1 ms (see figure 7).  
p
-55°C £ T  
£ +175°C, -55°C £ T  
£ +175°C (ambient temperatures).  
STG  
op  
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,  
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing  
at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
Distribution Statement A. Approved for public release; distribution is unlimited.  
1234567...20

中文翻译

下载PDF

与JAN1N6117US相关器件

型号 品牌 获取价格 描述 数据表
JAN1N6118 MICROSEMI

获取价格

 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JAN1N6118 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 25.1V V(RWM), Bidirectional, 2 Element, Silicon, HER
JAN1N6118A SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 25.1V V(RWM), Bidirectional, 2 Element, Silicon, HER
JAN1N6118A MICROSEMI

获取价格

 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JAN1N6118A SENSITRON

获取价格

 		500 W Transient Voltage Suppressor
JAN1N6118AUS SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 25.1V V(RWM), Unidirectional, 1 Element, Silicon, HE
JAN1N6118AUS SENSITRON

获取价格

 		500 W Transient Voltage Suppressor SM
JAN1N6118US SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 25.1V V(RWM), Bidirectional, 1 Element, Silicon
JAN1N6119 MICROSEMI

获取价格

 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JAN1N6119 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 2 Element, Silicon, HER

与JAN1N6117US相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证