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JAN1N3070-1

更新时间： 2024-11-14 21:14:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
17页 199K
描述
Rectifier Diode, 1 Element, 0.1A, Silicon, SIMILAR TO DO-7, 2 PIN

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JAN1N3070-1 技术参数

是否Rohs认证： 不符合生命周期：Active
零件包装代码：DO-7包装说明：SIMILAR TO DO-7, 2 PIN
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.38外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-XALF-W2
元件数量：1端子数量：2
最大输出电流：0.1 A封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
认证状态：Qualified参考标准：MIL-19500/169J
最大反向恢复时间：0.05 µs表面贴装：NO
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

JAN1N3070-1 数据手册

 浏览型号JAN1N3070-1的Datasheet PDF文件第2页浏览型号JAN1N3070-1的Datasheet PDF文件第3页浏览型号JAN1N3070-1的Datasheet PDF文件第4页浏览型号JAN1N3070-1的Datasheet PDF文件第5页浏览型号JAN1N3070-1的Datasheet PDF文件第6页浏览型号JAN1N3070-1的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 4 February 2010.  
INCH-POUND  
MIL-PRF-19500/169N  
2 NOVEMBER 2009  
SUPERSEDING  
MIL-PRF-19500/169M  
10 APRIL 2008  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,  
1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC  
Device types 1N3070, 1N3070-1, 1N3070UR-1, and 1N4938 are inactive for new design (see 6.4).  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein  
shall consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, switching diodes. Three levels of  
product assurance are provided for each device type and two product assurance levels are provided for die, as  
specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die).  
1.3 Maximum ratings. T = +25°C, unless otherwise specified.  
A
V
BR  
V
RWM  
I
I
I
T
R
R
ΘJEC  
(2)  
R
O(PCB)  
= 75°C (1)  
FSM1  
t = 1s  
FSM2  
t = 1µs  
STG  
ΘJL  
ΘJA(PCB)  
(2) (3)  
and T  
L = .375 inch  
(9.53 mm) (2)  
T
p
J
A
p
V dc  
200  
V (pk)  
175  
mA  
mA (pk) A (pk)  
500  
°C  
°C/W  
°C/W  
°C/W  
100  
2
-65 to +175  
250  
100  
325  
(1) For temperature-current derating curves, see figure 6.  
(2) See figures 7 and 8 for thermal impedance curves.  
(3) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board  
A
(PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch  
(1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm)  
x 1 inch (25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R  
ΘJA  
with a defined PCB thermal  
resistance condition included is measured at I = 200 mA dc.  
O
1.4 Primary electrical characteristics. T = +25°C, unless otherwise indicated.  
A
V
I
at  
t
rr  
F1  
R1  
I
= 100mA dc  
V
R
= 175 V dc  
F
V dc  
1.0  
ns  
50  
µA dc  
0.1  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://assist.daps.dla.mil .  
AMSC N/A  
FSC 5961  
1234567...17

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JAN1N3070-1 替代型号

型号 品牌 替代类型 描述 数据表
1N3070-1 MICROSEMI

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JAN1N3070UR-1 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.1A, Silicon, DO-213AA, DO-213AA, 2 PIN
JAN1N3154 MICROSEMI

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 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3154A-1 MICROSEMI

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 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3154UR-1 MICROSEMI

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 		Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N3155 MOTOROLA

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 		8.4V, SILICON, VOLTAGE REFERENCE DIODE, DO-7
JAN1N3155A MICROSEMI

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 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3155A-1 MICROSEMI

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 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3155UR-1 CDI-DIODE

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 		Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N3156 MICROSEMI

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 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3156A MICROSEMI

获取价格

 		Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,

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