是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.92 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-XALF-F2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大功率耗散: | 0.1 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500/195 |
最大反向电流: | 0.5 µA | 最大反向恢复时间: | 0.004 µs |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | FLAT | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N3287 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.05A, 6V V(RRM), Germanium, | |
JAN1N3287R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 6V V(RRM), Germanium, | |
JAN1N3287X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 6V V(RRM), Germanium, | |
JAN1N3289 | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 150A, 200V V(RRM), Silicon, DO-205AA | |
JAN1N3289RA | POWEREX |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 100A, 200V V(RRM), Silicon, | |
JAN1N3291A | POWEREX |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, | |
JAN1N3291R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 | |
JAN1N3293 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 | |
JAN1N3293 | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 150A, Silicon, DO-205AA, | |
JAN1N3293R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 |