Datasheet > JAN1N3157A

JAN1N3157A

更新时间： 2024-11-16 10:52:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	130K
描述
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

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JAN1N3157A 数据手册

1N3154 thru 1N3157, A, -1, e3

8.4 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes

provides a selection of 8.4 V nominal voltages and temperature coefficients to

as low as 0.001 %/^oC for minimal voltage change with temperature when

operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are

also available in JAN, JANTX, and JANTXV military qualifications. As a further

option for commercial product, they are available as RoHS Compliant with an

e3 suffix added to the part number. Microsemi also offers numerous other

Zener Reference Diode products for a variety of other voltages from 6.2 V to

200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N3154 thru 1N3157A series

•

Provides minimal voltage changes over a broad

temperature range

Standard reference voltage of 8.4V +/- 5% with tighter

tolerances available

For instrumentation and other circuit designs

requiring a stable voltage reference

•

1N3154, 3155, 3156, and 3157 also have military

qualification to MIL-PRF-19500/158 up to the

JANTXV level by adding JAN, JANTX, or JANTXV

prefixes to part numbers as well as “-1” suffix, e.g.

JANTX1N3157-1, etc.

Maximum temperature coefficient selections

available from 0.01%/ºC to 0.001%/ºC

Tight reference voltage tolerances at the 8.4 V

nominal is available by adding tolerance 1%, 2%,

3%, etc. after the part number for identification e.g.

1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

•

Internal metallurgical bonds

JANS Equivalent available via SCD

•

Flexible axial-lead mounting terminals

Radiation Hardened devices available by changing

1N prefix to RH, e.g. RH3156, RH3157, RH3157A,

etc. Also consult factory for “RH” data sheet

brochure

Nonsensitive to ESD per MIL-STD-750 Method 1020

•

RoHS Compliant devices available by adding an “e3”

suffix (not applicable to military)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & StorageTemperature: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case with DO-7

(DO-204AA) package

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 55 mA. NOTE: For optimum

voltage-temperature stability, I_Z= 10.0 mA (less than

90 mW in dissipated power)

•

TERMINALS: Tin-Lead (military) or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, Method 2026

•

Solder temperatures: 260 ^oC for 10 s (maximum)

•

MARKING: Part number and cathode band

POLARITY: Reference diode to be operated with the

banded end positive with respect to the opposite end

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.2 grams.

See package dimensions on last page

7-18-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与JAN1N3157A相关器件

型号	品牌	获取价格	描述	数据表
JAN1N3157A-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JAN1N3157UR-1	CDI-DIODE	获取价格	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N3157UR-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N3164R	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, Silicon, DO-205AB,
JAN1N3168	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-205AB
JAN1N3168R	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, Silicon, DO-205AB,
JAN1N3170	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, Silicon, DO-205AB,
JAN1N3170R	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 600V V(RRM), Silicon, DO-205AB
JAN1N3172	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 800V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
JAN1N3172R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 800V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1

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