J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J304
J305
−2 to −6
−30
−30
4.5
3
5
1
−0.5 to −3
FEATURES
BENEFITS
APPLICATIONS
D Excellent High Frequency Gain: J304,
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 11 dB (typ) @ 400 MHz
D Very High System Sensitivity
D High Quality of Amplification
D Very Low Noise: 3.8 dB (typ) @
D Sample-and-Hold
400 MHz
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Capacitance Switches
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
1
2
3
S
D
G
Top View
ABSOLUTE MAXIMUM RATINGS
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Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
16
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
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