Datasheet > J308_06

J308_06

更新时间： 2024-01-23 05:33:53

品牌	Logo	应用领域
安森美 - ONSEMI		放大器
页数	文件大小	规格书
6页	191K
描述
JFET VHF/UHF Amplifiers

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中文翻译

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数据手册

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J308_06 数据手册

J308

JFET VHF/UHF Amplifiers

N−Channel — Depletion

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain−Source Voltage

Gate−Source Voltage

Forward Gate Current

Total Device Dissipation

Vdc

mAdc

@ T = 25°C

Derate above 25°C

350

2.8

mW/°C

°C

CASE 29−11, STYLE 5

TO−92 (TO−226AA)

Junction Temperature Range

Storage Temperature Range

−65 to +125

−65 to +150

stg

°C

1 DRAIN

GATE

2 SOURCE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Gate−Source Breakdown Voltage

−25

—

Vdc

(BR)GSS

(I = −1.0 μAdc, V = 0)

Gate Reverse Current

(V = −15 Vdc, V = 0, T = 25°C)

GSS

—

−1.0

nAdc

μAdc

(V = −15 Vdc, V = 0, T = +125°C)

Gate Source Cutoff Voltage

(V = 10 Vdc, I = 1.0 nAdc)

GS(off)

Vdc

J308

J309

J310

−1.0

−2.0

—

−6.5

−4.0

−6.5

ON CHARACTERISTICS

(1)

Zero−Gate−Voltage Drain Current

mAdc

Vdc

DSS

(V = 10 Vdc, V = 0)

J308

J309

J310

—

Gate−Source Forward Voltage

(V = 0, I = 1.0 mAdc)

—

1.0

GS(f)

Publication Order Number:

August, 2006 − Rev. 2

J308/D

12 3 4 5 6

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