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J308L18-2 PDF预览

J308L18-2

更新时间: 2024-01-03 14:31:50
品牌 Logo 应用领域
威世 - VISHAY 放大器晶体管
页数 文件大小 规格书
2页 54K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA

J308L18-2 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownHTS代码:8541.21.00.75
风险等级:5.66配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):2.5 pF
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:135 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

J308L18-2 数据手册

 浏览型号J308L18-2的Datasheet PDF文件第2页 

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