Datasheet > J308/D

J308/D

更新时间： 2024-09-25 23:59:59

品牌	Logo	应用领域
其他 - ETC		放大器
页数	文件大小	规格书
8页	110K
描述
JFET VHF/UHF Amplifiers

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中文翻译

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数据手册

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J308/D 数据手册

ON Semiconductort

J308

J309

J310

JFET VHF/UHF Amplifiers

N–Channel — Depletion

ON Semiconductor Preferred Devices

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

Unit

Vdc

Gate–Source Voltage

Forward Gate Current

Vdc

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

CASE 29–11, STYLE 5

TO–92 (TO–226AA)

Junction Temperature Range

Storage Temperature Range

–65 to +125

–65 to +150

°C

stg

1 DRAIN

GATE

2 SOURCE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Gate–Source Breakdown Voltage

–25

—

Vdc

(BR)GSS

(I = –1.0 µAdc, V = 0)

Gate Reverse Current

(V = –15 Vdc, V = 0, T = 25°C)

GSS

—

–1.0

nAdc

µAdc

(V = –15 Vdc, V = 0, T = +125°C)

Gate Source Cutoff Voltage

(V = 10 Vdc, I = 1.0 nAdc)

GS(off)

Vdc

J308

J309

J310

–1.0

–2.0

—

–6.5

–4.0

–6.5

ON CHARACTERISTICS

(1)

Zero–Gate–Voltage Drain Current

mAdc

Vdc

DSS

(V = 10 Vdc, V = 0)

J308

J309

J310

—

Gate–Source Forward Voltage

(V = 0, I = 1.0 mAdc)

—

1.0

GS(f)

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

J308/D

12 3 4 5 6 7 8

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与J308/D相关器件

型号	品牌	获取价格	描述	数据表
J308_06	ONSEMI	获取价格	JFET VHF/UHF Amplifiers
J308_T0-92	MICROSS	获取价格	N-CHANNEL JFET
J308-AMMO	NXP	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal
J308L	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L18	VISHAY	获取价格	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
J308L-18	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L-18	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L18-1	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L18-2	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-