J308

更新时间： 2024-01-07 04:14:27

品牌	Logo	应用领域
MICROSS		晶体晶体管放大器
页数	文件大小	规格书
1页	293K
描述
Linear Systems replaces discontinued Siliconix J308

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中文翻译

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技术参数
数据手册

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J308 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.90.00.00	风险等级：	5.15
配置：	SINGLE	最小漏源击穿电压：	25 V
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	2.5 pF
最高频带：	ULTRA HIGH FREQUENCY BAND	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
最高工作温度：	135 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

J308 数据手册

J308

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix J308

FEATURES

The J308 is a high frequency n-channel JFET offering a

DIRECT REPLACEMENT FOR SILICONIX J308

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

wide range and low noise performance. The TO-92

package is well suited for cost sensitive applications

and mass production.

G_pg= 11.5dB

NF = 2.7dB

ABSOLUTE MAXIMUM RATINGS @ 25°C¹

(See Packaging Information).

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current

MAXIMUM VOLTAGES

Gate to Drain Voltage or Gate to Source Voltage

J308 Benefits:

‐55°C to +150°C

‐55°C to +135°C

High Power Low Noise gain

Dynamic Range greater than 100dB

Easily matched to 75Ω input

350mW

10mA

‐25V

J308 Applications:

UHV / VHF Amplifiers

Mixers

Oscillators

J308 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(F)

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐25

0.7

‐1

‐‐

TYP.

‐‐

MAX

‐‐

‐6.5

‐‐

UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate to Source Cutoff Voltage

Drain to Source Saturation Current²

Gate Operating Current (Note 3)

Drain to Source On Resistance

V_DS= 0V, I_G= ‐1µA

V_DS= 0V, I_G= 10mA

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0V

V_DG= 9V, I_D= 10mA

V_GS= 0V, I_D= 1mA

I_G

r_DS(on)

‐15

‐‐

J308 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

CHARACTERISTIC

Forward Transconductance

Output Conductance

Input Capacitance

MIN

‐‐

TYP.

110

MAX

‐‐

250

UNIT

µS

CONDITIONS

V_DS= 10V, I_D= 10mA , f = 1kHz

g_os

C_iss

‐‐

V_DS= 10V, V_GS= ‐10V , f = 1MHz

Click To Buy

C_rss

e_n

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

1.9

‐‐

2.5

‐‐

nV/√Hz

V_DS= 10V, I_D= 10mA , f = 100Hz

J308 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

Noise Figure

f = 105MHz

f = 450MHz

f = 105MHz

‐‐

1.5

2.7

‐‐

G_pg

g_fg

Power Gain³

f = 450MHz

f = 105MHz

‐‐

11.5

‐‐

V_DS= 10V, I_D= 10mA

Forward Transconductance

f = 450MHz

f = 105MHz

f = 450MHz

‐‐

g_og

Output Conductance

0.16

0.55

Note 1 ‐ Absolute maximum ratings are limiting values above which J308 serviceability may be impaired.

Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%

Note 3 ‐ Measured at optimum input noise match

Micross Components Europe

TO-92 (Bottom View)

Available Packages:

J308 in TO-92

J308 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

中文翻译

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与J308相关器件

型号	品牌	获取价格	描述	数据表
J308/D	ETC	获取价格	JFET VHF/UHF Amplifiers
J308_06	ONSEMI	获取价格	JFET VHF/UHF Amplifiers
J308_T0-92	MICROSS	获取价格	N-CHANNEL JFET
J308-AMMO	NXP	获取价格	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal
J308L	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L18	VISHAY	获取价格	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA
J308L-18	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L-18	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
J308L18-1	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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