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J110RLRA PDF预览

J110RLRA

更新时间: 2024-11-16 03:44:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关
页数 文件大小 规格书
4页 53K
描述
JFET − General Purpose N−Channel − Depletion

J110RLRA 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CASE 29, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.21.00.95风险等级:5.01
配置:SINGLE最大漏源导通电阻:18 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):15 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:135 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

J110RLRA 数据手册

 浏览型号J110RLRA的Datasheet PDF文件第2页浏览型号J110RLRA的Datasheet PDF文件第3页浏览型号J110RLRA的Datasheet PDF文件第4页 
J110  
JFET − General Purpose  
N−Channel − Depletion  
N−Channel Junction Field Effect Transistors, depletion mode  
(Type A) designed for general purpose audio amplifiers, analog  
switches and choppers.  
http://onsemi.com  
Features  
1 DRAIN  
N−Channel for Higher Gain  
Drain and Source Interchangeable  
High AC Input Impedance  
High DC Input Resistance  
3
GATE  
Low R  
< 18 W  
DS(on)  
2 SOURCE  
Fast Switching t  
+ t = 8.0 ns (Typ)  
r
d(on)  
Low Noise en = 6.0 nV/Hz @ 10 Hz (Typ)  
Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Gate−Source Voltage  
DrainGate Voltage  
Gate Current  
Symbol  
Value  
−25  
−25  
10  
Unit  
Vdc  
J110  
AYWW G  
G
CASE 29  
TO−92 (TO−226)  
STYLE 5  
VG  
V
S
Vdc  
DG  
1
2
I
mAdc  
G
3
Total Device Dissipation  
P
D
@ T = 25°C  
310  
2.82  
mW  
mW/°C  
A
J110 = Device Code  
Derate above 25°C  
Operating Junction Temp Range  
Storage Temperature Range  
A
= Assembly Location  
T
135  
°C  
°C  
J
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
T
stg  
65 to +150  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
J110  
TO−92  
1000 Units / Box  
1000 Units / Box  
J110G  
TO−92  
(Pb−Free)  
J110RLRA  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
J110RLRAG  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 6  
J110/D  

J110RLRA 替代型号

型号 品牌 替代类型 描述 数据表
J110RLRAG ONSEMI

完全替代

JFET − General Purpose N−Channel − Depletion
J110G ONSEMI

完全替代

JFET − General Purpose N−Channel − Depletion
J110 ONSEMI

类似代替

JFET − General Purpose N−Channel − Depletion

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