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J111 PDF预览

J111

更新时间: 2024-10-01 03:44:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关瞄准线
页数 文件大小 规格书
5页 85K
描述
JFET Chopper Transistors N−Channel - Depletion

J111 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
HTS代码:8541.21.00.95Factory Lead Time:1 week
风险等级:0.35Is Samacsys:N
配置:SINGLE最大漏源导通电阻:30 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:CHOPPER晶体管元件材料:SILICON
Base Number Matches:1

J111 数据手册

 浏览型号J111的Datasheet PDF文件第2页浏览型号J111的Datasheet PDF文件第3页浏览型号J111的Datasheet PDF文件第4页浏览型号J111的Datasheet PDF文件第5页 
J111, J112  
JFET Chopper Transistors  
N−Channel — Depletion  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
1 DRAIN  
MAXIMUM RATINGS  
Rating  
DrainGate Voltage  
Symbol  
Value  
Unit  
3
GATE  
V
−35  
Vdc  
DG  
GateSource Voltage  
Gate Current  
V
−35  
50  
Vdc  
GS  
I
mAdc  
G
2 SOURCE  
Total Device Dissipation @ T = 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
Derate above = 25°C  
Lead Temperature  
T
300  
°C  
°C  
L
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−92  
CASE 29−11  
STYLE 5  
1
2
3
MARKING DIAGRAM  
J11x  
AYWW G  
G
J11x = Device Code  
x = 1 or 2  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
J111/D  

J111 替代型号

型号 品牌 替代类型 描述 数据表
J113 ONSEMI

类似代替

2.0 mA, 35 V N-Channel JFET Chopper Transistor
J112 ONSEMI

类似代替

JFET Chopper Transistor

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