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J110-T/R PDF预览

J110-T/R

更新时间: 2024-11-16 21:04:23
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
7页 34K
描述
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal

J110-T/R 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.03
配置:SINGLE最小漏源击穿电压:25 V
最大漏源导通电阻:18 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

J110-T/R 数据手册

 浏览型号J110-T/R的Datasheet PDF文件第2页浏览型号J110-T/R的Datasheet PDF文件第3页浏览型号J110-T/R的Datasheet PDF文件第4页浏览型号J110-T/R的Datasheet PDF文件第5页浏览型号J110-T/R的Datasheet PDF文件第6页浏览型号J110-T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
J108; J109; J110  
N-channel silicon junction FETs  
Product specification  
1996 Jul 30  
Supersedes data of April 1995  
File under Discrete Semiconductors, SC07  

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