是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.91 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.4 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J110-TR1-E3 | VISHAY |
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Transistor | |
J110TR2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92 | |
J110TR3 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92 | |
J110TR4 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92 | |
J110ZL1 | MOTOROLA |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92 | |
J111 | ONSEMI |
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JFET Chopper Transistors N−Channel - Depletion | |
J111 | NXP |
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N-channel silicon field-effect transistors | |
J111 | FAIRCHILD |
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N-Channel Switch | |
J111 | CALOGIC |
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N-Channel JFET Switch | |
J111 | MICRO-ELECTRONICS |
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N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |