IXYN150N60B3
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
40
70
S
Cies
Coes
Cres
6950
400
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
150
Qg(on)
Qge
Qgc
260
39
nC
nC
nC
IC = 150A, VGE = 15V, VCE = 0.5 • VCES
115
td(on)
tri
27
88
ns
ns
Inductive load, TJ = 25°C
IC = 75A, VGE = 15V
Eon
td(off)
tfi
4.20
167
80
mJ
ns
VCE = 400V, RG = 2
ns
Note 2
Eof
2.60
mJ
f
td(on)
tri
26
84
ns
ns
Inductive load, TJ = 150°C
C = 75A, VGE = 15V
Eon
td(off)
tfi
5.30
220
110
3.76
mJ
ns
VCE = 400V, RG = 2
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.18 °C/W
°C/W
0.05
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
SOT-227B (IXYN) OUTLINE
M4-7 NUT
(4 PLACES)
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A
B
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N
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PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537