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IXRH50N120 PDF预览

IXRH50N120

更新时间： 2024-11-23 11:08:07
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管栅局域网
页数 文件大小 规格书
2页 50K
描述
IGBT with Reverse Blocking capability

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中文翻译

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IXRH50N120 技术参数

是否无铅： 不含铅生命周期：Transferred
零件包装代码：TO-247AD包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
风险等级：5.72Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：60 A
集电极-发射极最大电压：1200 V配置：SINGLE
门极发射器阈值电压最大值：8 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：455 ns
标称接通时间 (ton)：180 nsBase Number Matches：1

IXRH50N120 数据手册

 浏览型号IXRH50N120的Datasheet PDF文件第2页 
Advanced Technical Information  
VCES = 1000 / 1200 V  
IC25 = 60 A  
VCE(sat) = 2.5 V  
IGBT with Reverse  
Blocking capability  
IXRH 50N120  
IXRH 50N100  
tf  
= 75 ns  
C
TO-247 AD  
G
G
C
E
C (TAB)  
E
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
Features  
IGBT  
●
IGBT with NPT (non punch through)  
structure  
reverse blocking capability indepen-  
dent from gate voltage  
Symbol  
VCES  
Conditions  
Maximum Ratings  
±
1200  
±
1000  
TVJ = 25°C to 150°C  
IXRH 50N120  
IXRH 50N100  
V
V
●
- function of series diode monolithically  
integrated  
- no external series diode required  
- soft reverse recovery  
positive temperature coefficient of  
saturation voltage  
- optimum current distribution  
when paralleled  
±
VGES  
20  
V
IC25  
IC90  
TC = 25°C  
TC = 90°C  
60  
40  
A
A
●
ICM  
VCEK  
VGE = 0/15 V; R = 22 Ω; TVJ = 125°C  
80  
A
V
RBSOA, ClampGed inductive load; L = 100 µH  
500  
Ptot  
TC = 25°C  
300  
W
●
Epoxy of TO 247 package meets  
UL 94V-0  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
converters requiring reverse blocking  
capability:  
- current source inverters  
- matrix converters  
- bi-directional switches  
- resonant converters  
- induction heating  
VCE(sat)  
IC = 40 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.5  
3.0  
3.1  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4
8
V
VCE = 0.8 VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
3.0  
- auxiliary switches for soft switching  
in the main current path  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
80  
100  
380  
75  
3.6  
2.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 500 V; IC = 40 A  
VGE = 0/15 V; RG = 22 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 500V; VGE = 15 V; IC = 40 A  
4
150  
nF  
nC  
IRM  
trr  
IF = 40 A; diC/dt = -400 A/µs; TVJ = 125°C  
VCE = -500 V; VGE = 15 V  
58  
840  
A
ns  
RthJC  
0.42 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
12

中文翻译

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