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IXRP15N120 PDF预览

IXRP15N120

更新时间: 2024-11-23 21:15:47
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
2页 65K
描述
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3

IXRP15N120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):25 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):253 ns
标称接通时间 (ton):33.5 nsBase Number Matches:1

IXRP15N120 数据手册

 浏览型号IXRP15N120的Datasheet PDF文件第2页 
Advanced Technical Information  
IXRP 15N120  
VCES  
IC25  
VCE(sat) typ.  
= 1200V  
IGBT with Reverse  
Blocking capability  
=
=
25A  
2.5V  
2
TO-220AB  
1
TAB  
1 = Gate; 2, TAB = Collector; 3 = Emitter  
3
Features  
IGBT  
• IGBT with NPT (non punch through)  
structure  
• reverse blocking capability  
- function of series diode monolithically  
integrated, no external series diode  
required  
- soft reverse recovery  
• positive temperature coefficient of  
saturation voltage  
Symbol  
VCES  
Conditions  
Maximum Ratings  
± ±  
TVJ = 25°C to 150°C  
Continuous  
1200  
V
V
±
VGES  
20  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
25  
15  
A
A
ICM  
VCEK  
VGE = 0/15 V; RG = 47 ; TVJ = 125°C  
RBSOA; Clamped inductive load; L = 100 µH  
30  
600  
A
V
• Epoxy of package meets UL 94V-0  
SCSOA  
Ptot  
600 V  
10  
µs  
W
TC = 25°C  
300  
Applications  
Converters requiring reverse blocking  
capability:  
- current source inverters  
- matrix converters  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
- bi-directional switches  
- resonant converters  
- induction heating  
- auxiliary switches for soft switching  
in the main current path  
min. typ. max.  
VCE(sat)  
IC = 10 A; VGE = 15 V  
TVJ = 25°C  
TVJ = 125°C  
2.5  
3.3  
2.95  
V
V
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
3
6
V
TVJ = 25°C  
TVJ = 125°C  
50  
µA  
mA  
1.0  
36  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
500  
nA  
nC  
QGon  
VCE = 120 V; VGE = 15 V; IC = 10 A  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110120b  
1 - 2  

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