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IXSA16N60 PDF预览

IXSA16N60

更新时间: 2024-11-25 22:45:43
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
2页 52K
描述
Low V CE(sat) IGBT - Short Circuit SOA Capability

IXSA16N60 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):32 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):470 ns
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):150 ns
标称接通时间 (ton):30 nsBase Number Matches:1

IXSA16N60 数据手册

 浏览型号IXSA16N60的Datasheet PDF文件第2页 
Preliminary Data Sheet  
IXSA 16N60  
IXSP 16N60  
VCES  
IC25  
= 600V  
= 16A  
Low VCE(sat) IGBT  
Short Circuit SOA Capability  
VCE(sat)typ = 1.8V  
TO-220AB(IXSP)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-263AA  
IC25  
IC90  
ICM  
TC = 25°C  
32  
16  
52  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
G
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 150 Ω  
Clamped inductive load, L = 300 µH  
ICM = 32  
@ 0.8 VCES  
A
E
TAB  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 82 Ω, non repetitive  
5
µs  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Weight  
2
g
l International standard package  
l Guaranteed Short Circuit SOA  
capability  
l Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering for 10s  
300  
°C  
260  
°C  
- for low on-state conduction losses  
l High current handling capability  
l MOS Gate turn-on  
- drive simplicity  
l Fast fall time for switching speeds  
up to 20 kHz  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 750 µA, VCE = VGE  
600  
3.5  
V
6.5  
V
l
AC motor speed control  
l
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
Uninterruptible power supplies (UPS)  
l
Welding  
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
nA  
V
Advantages  
VCE(sat)  
IC = IC90, VGE = 15 V  
1.8  
2.3  
l
High power density  
96539A (05/97)  
© 1997 IXYS All rights reserved  

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