是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 32 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 470 ns |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 150 ns |
标称接通时间 (ton): | 30 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSD10N120A-3T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-8 | |
IXSD15N120A-4T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 | |
IXSD15N120B-4U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 | |
IXSD16N60-3T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-8 | |
IXSD25N100-5T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-5 | |
IXSD25N100A-5T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-5 | |
IXSD25N120A-5T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-5 | |
IXSD30N60-5X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2 | |
IXSD30N60B-5X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2 | |
IXSD35N100A-7M | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-7 |