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IXGH22N50B PDF预览

IXGH22N50B

更新时间： 2024-11-20 22:41:15
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 72K
描述
HiPerFAST IGBT

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中文翻译

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IXGH22N50B 技术参数

生命周期：Obsolete零件包装代码：TO-247AD
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.72
其他特性：FAST外壳连接：COLLECTOR
最大集电极电流 (IC)：44 A集电极-发射极最大电压：500 V
配置：SINGLE最大降落时间（tf）：110 ns
门极发射器阈值电压最大值：5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：140 ns
标称接通时间 (ton)：15 nsBase Number Matches：1

IXGH22N50B 数据手册

 浏览型号IXGH22N50B的Datasheet PDF文件第2页 
Symbol  
                                                    
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o
                                                               
                                                                 
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i
                                                                      
                                                                       
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Ma  
                                                                                                                                   
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
x
                                                                                                                                        
                                                                                                                                          
i
                                                                                                                                          
                                                                                                                                           
m
                                                                                                                                           
                                                                                                                                              
u
                                                                                                                                               
                                                                                                                                                 
m
                                                                                                                                                 
                                                                                                                                                     
Rati  
                                                                                                                                                     
                                                                                                                                                        
                                                                                                                                                        
                                                                                                                                                          
                                                                                                                                                          
                                                                                                                                                           
                                                                                                                                                           
                                                                                                                                                            
n
                                                                                                                                                            
                                                                                                                                                              
g
                                                                                                                                                              
                                                                                                                                                                
s
                                                                                                                                                                
Preliminary data  
VCES  
IC(25)  
= 500 V  
= 44 A  
IXGH22N50B  
IXGH22N50BS  
HiPerFASTTM IGBT  
VCE(sat)typ = 2.1 V  
tfi(typ)  
= 55 ns  
TO-247 SMD*  
C (TAB)  
TAB)  
G
E
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
500  
500  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
44  
22  
88  
A
A
A
E
G = Gate,  
C = Collector,  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 100 µH  
ICM = 44  
@ 0.8 VCES  
A
E = Emitter,  
TAB = Collector  
Features  
PC  
TC = 25°C  
150  
W
•International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
JEDEC TO-247 SMD surface  
TJM  
Tstg  
mountable and JEDEC TO-247 AD  
-55 ... +150  
•High frequency IGBT  
•High current handling capability  
•HiPerFASTTM HDMOSTM process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
•MOS Gate turn-on  
Weight  
TO-247 AD  
TO-247 SMD  
6
4
g
g
- drive simplicity  
Applications  
•Uninterruptible power supplies (UPS)  
•Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
•AC motor speed control  
•DC servo and robot drives  
•DC choppers  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
500  
2.5  
V
V
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
•High power density  
•Very low switching losses for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
frequency applications  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.1  
2.5  
•Easy to mount with 1 screw,TO-247  
(insulated mounting screw hole)  
© 1996 IXYS All rights reserved  
96532A(12/96)  
12

中文翻译

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