Preliminary Technical Information
GenX3TM 1200V IGBT
IXGH24N120C3H1
VCES = 1200V
IC25 = 48A
VCE(sat) ≤ 4.2V
tfi(typ) = 110ns
High speed PT IGBTs for
10-50kHz Switching
Symbol
Test Conditions
Maximum Ratings
TO-247AD
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
IC25
IC100
ICM
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
48
24
96
A
A
A
TAB
C
E
IA
TC = 25°C
TC = 25°C
20
250
A
mJ
A
EAS
G = Gate
C = Collector
SSOA
V
GE= 15V, TJ = 125°C, RG = 5Ω
ICM = 48
E = Emitter
TAB = Collector
(RBSOA)
Clamped inductive load @VCE ≤ 1200V
PC
TC = 25°C
250
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
ꢀInternational standard packages:
JEDEC TO-247AD
Md
Mounting torque
1.13/10
Nm/lb.in.
ꢀIGBT and anti-parallel FRD in one
package
TL
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
TSOLD
ꢀMOS Gate turn-on
- drive simplicity
ꢀSonic-FRD diode
Weight
6
g
- soft recovery with low IRM
Avalanche rated
ꢀ
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
ꢀ
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
ꢀ
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
1200
2.5
V
V
ꢀ
5.0
ꢀ
ICES
VCE = VCES
VGE = 0V
100 μA
1.5 mA
ꢀ
TJ = 125°C
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
4.2
nA
VCE(sat)
IC = 20A, VGE = 15V, Note 2
3.6
3.1
V
V
DS99942(01/08)
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