5秒后页面跳转
捷配首页

Datasheet > 晶体管 > IGBT> IXGH22N50BS
IXGH22N50BS PDF预览

IXGH22N50BS

更新时间： 2024-11-05 22:41:15
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管栅局域网
页数 文件大小 规格书
2页 72K
描述
HiPerFAST IGBT

阅读下载

中文翻译

获取价格

IXGH22N50BS 技术参数

生命周期：Obsolete零件包装代码：TO-247
包装说明：TO-247, 2 PIN针数：3
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：44 A集电极-发射极最大电压：500 V
配置：SINGLE最大降落时间（tf）：110 ns
门极发射器阈值电压最大值：5 V门极-发射极最大电压：20 V
JESD-30 代码：R-PSFM-G2元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：140 ns标称接通时间 (ton)：15 ns
Base Number Matches：1

IXGH22N50BS 数据手册

 浏览型号IXGH22N50BS的Datasheet PDF文件第2页 
Symbol  
                                                    
T
                                                    
                                                      
e
                                                      
                                                        
s
                                                        
                                                          
t
                                                          
                                                            
C
                                                            
                                                               
o
                                                               
                                                                 
n
                                                                 
                                                                   
d
                                                                   
                                                                      
i
                                                                      
                                                                       
t
                                                                       
                                                                        
i
                                                                        
                                                                         
o
                                                                         
                                                                           
n
                                                                           
                                                                             
s
                                                                             
                                                                                                                                   
Ma  
                                                                                                                                   
                                                                                                                                      
                                                                                                                                      
                                                                                                                                        
x
                                                                                                                                        
                                                                                                                                          
i
                                                                                                                                          
                                                                                                                                           
m
                                                                                                                                           
                                                                                                                                              
u
                                                                                                                                               
                                                                                                                                                 
m
                                                                                                                                                 
                                                                                                                                                     
Rati  
                                                                                                                                                     
                                                                                                                                                        
                                                                                                                                                        
                                                                                                                                                          
                                                                                                                                                          
                                                                                                                                                           
                                                                                                                                                           
                                                                                                                                                            
n
                                                                                                                                                            
                                                                                                                                                              
g
                                                                                                                                                              
                                                                                                                                                                
s
                                                                                                                                                                
Preliminary data  
VCES  
IC(25)  
= 500 V  
= 44 A  
IXGH22N50B  
IXGH22N50BS  
HiPerFASTTM IGBT  
VCE(sat)typ = 2.1 V  
tfi(typ)  
= 55 ns  
TO-247 SMD*  
C (TAB)  
TAB)  
G
E
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
500  
500  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
44  
22  
88  
A
A
A
E
G = Gate,  
C = Collector,  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 100 µH  
ICM = 44  
@ 0.8 VCES  
A
E = Emitter,  
TAB = Collector  
Features  
PC  
TC = 25°C  
150  
W
•International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
JEDEC TO-247 SMD surface  
TJM  
Tstg  
mountable and JEDEC TO-247 AD  
-55 ... +150  
•High frequency IGBT  
•High current handling capability  
•HiPerFASTTM HDMOSTM process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
•MOS Gate turn-on  
Weight  
TO-247 AD  
TO-247 SMD  
6
4
g
g
- drive simplicity  
Applications  
•Uninterruptible power supplies (UPS)  
•Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
•AC motor speed control  
•DC servo and robot drives  
•DC choppers  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
500  
2.5  
V
V
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
•High power density  
•Very low switching losses for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
frequency applications  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.1  
2.5  
•Easy to mount with 1 screw,TO-247  
(insulated mounting screw hole)  
© 1996 IXYS All rights reserved  
96532A(12/96)  
12

中文翻译

下载PDF

与IXGH22N50BS相关器件

型号 品牌 获取价格 描述 数据表
IXGH22N50BU1 IXYS

获取价格

 		HiPerFAST IGBT with Diode
IXGH22N50BU1S IXYS

获取价格

 		HiPerFAST IGBT with Diode
IXGH22N50C ETC

获取价格

 		TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 44A I(C) | TO-247AD
IXGH24N120C3 IXYS

获取价格

 		GenX3 1200V IGBT
IXGH24N120C3 LITTELFUSE

获取价格

 		GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH24N120C3H1 IXYS

获取价格

 		GenX3 1200V IGBT
IXGH24N120C3H1 LITTELFUSE

获取价格

 		GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH24N170 IXYS

获取价格

 		High Voltage IGBT
IXGH24N170 LITTELFUSE

获取价格

 		功能与特色: 应用:?
IXGH24N170_08 IXYS

获取价格

 		High Voltage IGBT

与IXGH22N50BS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证