5秒后页面跳转
IXDH35N60B PDF预览

IXDH35N60B

更新时间: 2024-02-24 13:31:14
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
4页 103K
描述
IGBT with optional Diode

IXDH35N60B 数据手册

 浏览型号IXDH35N60B的Datasheet PDF文件第2页浏览型号IXDH35N60B的Datasheet PDF文件第3页浏览型号IXDH35N60B的Datasheet PDF文件第4页 
IXDP 35N60 B  
IXDH 35N60 B  
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V  
VCES  
IC25  
= 600 V  
= 60 A  
IGBT  
with optional Diode  
High Speed,  
Low Saturation Voltage  
C
C
TO-247 AD  
IXDH ...  
G
G
G
C
E
E
E
AB)  
IXDH 35N60 B IXDH 35N60 BD1  
IXDP 35N60 B  
Symbol  
Conditions  
Maximum Ratings  
TO-220 AB  
IXDP ...  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 20 kW  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C (TAB)  
G = Gate,  
E = Emitter  
C = Collector ,  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
60  
35  
70  
A
A
A
TC = 90°C  
TC = 90°C, tp =1 ms  
RBSOA  
VGE= ±15 V, TJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 µH  
ICM = 110  
VCEK < VCES  
A
Features  
NPT IGBT technology  
low switching losses  
low tail current  
tSC  
(SCSOA)  
VGE= ±15 V, VCE = 600 V, TJ = 125°C  
RG = 10 W, non repetitive  
10  
µs  
no latch up  
PC  
TC = 25°C  
IGBT  
250  
80  
W
W
short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
optional ultra fast diode  
International standard package  
Diode  
TJ  
-55 ... +150  
-55 ... +150  
300  
°C  
°C  
°C  
Tstg  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Md  
Mounting torque  
TO-220  
TO-247  
0.4 - 0.6  
0.8 - 1.2  
Nm  
Nm  
Advantages  
Space savings  
High power density  
Weight  
Symbol  
6
g
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Typical Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninteruptible power supplies (UPS)  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
600  
3
V
V
IC = 0.7 mA, VCE = VGE  
VCE = VCES  
5
Switch-mode and resonant-mode  
TJ = 25°C  
TJ = 125°C  
0.1 mA  
mA  
power supplies  
1
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = 35 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.2  
2.7  
V
© 2000 IXYS All rights reserved  
1 - 4  

与IXDH35N60B相关器件

型号 品牌 获取价格 描述 数据表
IXDH35N60BD1 IXYS

获取价格

IGBT with optional Diode
IXDI402PI IXYS

获取价格

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SI IXYS

获取价格

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SI-16 IXYS

获取价格

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SIA IXYS

获取价格

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SIA-16 IXYS

获取价格

2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404 IXYS

获取价格

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404PI IXYS

获取价格

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404SI IXYS

获取价格

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404SI-16 IXYS

获取价格

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers