是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DFN | 包装说明: | 4 X 5 MM, ROHS COMPLIANT, DFN-6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.81 | 高边驱动器: | NO |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-PDSO-N6 |
长度: | 5 mm | 功能数量: | 2 |
端子数量: | 6 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 标称输出峰值电流: | 2 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC6,.2,40 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 4.5/30 V | 认证状态: | Not Qualified |
座面最大高度: | 0.9 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 30 V | 最小供电电压: | 4.5 V |
标称供电电压: | 15 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | NO LEAD | 端子节距: | 1 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.038 µs | 接通时间: | 0.04 µs |
宽度: | 3.99 mm |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXDI502D1T/R | IXYS |
完全替代 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXDI502D1T/R | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502PI | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502SIA | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502SIAT/R | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504 | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504D1 | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504D1T/R | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504PI | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504SIA | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI504SIAT/R | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers |