是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | DFN-8 | Reach Compliance Code: | compliant |
风险等级: | 5.55 | 高边驱动器: | NO |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-PDSO-N8 |
长度: | 5 mm | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 标称输出峰值电流: | 2 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC8,.2,37 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 4.5/35 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 35 V | 最小供电电压: | 4.5 V |
标称供电电压: | 18 V | 表面贴装: | YES |
温度等级: | AUTOMOTIVE | 端子形式: | NO LEAD |
端子节距: | 0.95 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.038 µs |
接通时间: | 0.04 µs | 宽度: | 4 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXDI602PI | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI602SI | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI602SIA | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI602SIATR | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI602SITR | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI604PI | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI604SI | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI604SIA | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI604SIATR | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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IXDI604SITR | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |
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