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IXDI430MCI

更新时间： 2024-02-17 07:59:25
品牌 Logo 应用领域
IXYS 局域网驱动双极性晶体管接口集成电路驱动器
页数 文件大小 规格书
12页 649K
描述
Buffer/Inverter Based MOSFET Driver, 30A, PSFM5, TO-220, 5 PIN

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中文翻译

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IXDI430MCI 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SFM包装说明：,
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.82高边驱动器：YES
接口集成电路类型：BUFFER OR INVERTER BASED IGBT/MOSFET DRIVERJESD-30 代码：R-PSFM-T5
JESD-609代码：e3功能数量：1
端子数量：5最高工作温度：125 °C
最低工作温度：-55 °C标称输出峰值电流：30 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大供电电压：35 V
最小供电电压：8.5 V标称供电电压：18 V
表面贴装：NO温度等级：MILITARY
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：35
断开时间：0.039 µs接通时间：0.045 µs
Base Number Matches：1

IXDI430MCI 数据手册

 浏览型号IXDI430MCI的Datasheet PDF文件第2页浏览型号IXDI430MCI的Datasheet PDF文件第3页浏览型号IXDI430MCI的Datasheet PDF文件第4页浏览型号IXDI430MCI的Datasheet PDF文件第5页浏览型号IXDI430MCI的Datasheet PDF文件第6页浏览型号IXDI430MCI的Datasheet PDF文件第7页 
IXDN430 / IXDI430 / IXDD430 / IXDS430  
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver  
Features  
General Description  
• Built using the advantages and compatibility  
of CMOS and IXYS HDMOSTM processes  
• Latch-UpProtected  
• High Peak Output Current: 30A Peak  
• Wide Operating Range: 8.5V to 35V  
• Under Voltage Lockout Protection  
• Ability to Disable Output under Faults  
• High Capacitive Load  
Drive Capability: 5600 pF in <25ns  
• Matched Rise And Fall Times  
• Low Propagation Delay Time  
• LowOutputImpedance  
TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrent  
gatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheir  
minimumswitchingtimeandmaximumpracticalfrequencylimits. The  
IXD_430 can source and sink 30A of peak current while producing  
voltageriseandfalltimesoflessthan30ns.Theinputofthedriversare  
compatiblewithTTLorCMOSandarefullyimmunetolatchupoverthe  
entire operating range. Designed with small internal delays, cross  
conduction/current shoot-through is virtually eliminated in all  
configurations. Their features and wide safety margin in operating  
voltage and power make the drivers unmatched in performance and  
value.  
The IXD_430 incorporates a unique ability to disable the output under  
faultconditions.Thestandardundervoltagelockoutvoltagesare11.75V  
for the IXD_430 parts and 8.5V for the IXD_430M parts. ULVO can be  
set to either level in the IXDS430 with the UNSEL input line. When a  
logical low is forced into the Enable inputs, both final output stage  
MOSFETs (NMOS and PMOS) are turned off. As a result, the output  
oftheIXDD430entersatristatemodeandenablesaSoftTurn-Offofthe  
MOSFETwhenashortcircuitisdetected. Thishelpspreventdamage  
thatcouldoccurtotheMOSFETifitweretobeswitchedoffabruptlydue  
toadv/dtover-voltagetransient.  
• LowSupplyCurrent  
Applications  
• DrivingMOSFETsandIGBTs  
• MotorControls  
• LineDrivers  
• PulseGenerators  
• Local Power ON / OFF Switch  
• Switch Mode Power Supplies (SMPS)  
• DCtoDCConverters  
TheIXDN430isconfiguredasanoninvertinggatedriver,andtheIXDI430  
is an inverting gate driver. The IXDS430 can be configured either as a  
noninvertingorinvertingdriver.TheIXD_430areavailableinthestandard  
28-pinSIOC(SI-CT),5-pinTO-220(CI),andintheTO-263(YI)surface  
mount packages. CT or 'Cool Tab' for the 28-pin SOIC package refers  
to the backside metal heatsink tab.  
• PulseTransformerDriver  
• Limiting di/dt Under Short Circuit  
• Class D Switching Amplifiers  
Ordering Information  
P ackage  
P art N um ber  
U ndervoltage  
Tem p. R ange  
C onfiguration  
T ype  
Lock-out  
11.75 V  
8.5 V  
11.75 V  
8.5 V  
IX D D 430Y I  
5-pin TO -263  
IX D D 430M Y I  
IX D D 430C I  
5-pin TO -220  
IX D D 430M C I  
N on Inverting w ith  
E nable  
-55°C to +125°  
IXD I430YI  
5-pin TO -263  
IX D I430M YI  
11.75 V  
8.5 V  
-55°C to +125°  
-55°C to +125°  
Inverting  
IXD I430C I  
5-pin TO -220  
IX D I430M C I  
IX D N 430Y I  
5-pin TO -263  
IX D N 430M Y I  
11.75 V  
8.5 V  
11.75 V  
8.5 V  
N on Inverting  
IX D N 430C I  
5-pin TO -220  
IX D N 430M C I  
11.75 V  
8.5 V  
Inverting / N on  
Inverting w ith  
E nable  
11.75 V  
or  
8.5 V  
-55°C to +125°  
IX D S 430S I  
28-pin S O IC  
and U V S E L  
Copyright © IXYS CORPORATION 2005  
DS99045C(04/04)  
First Release  
1234567...12

中文翻译

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IXDI430MCI 替代型号

型号 品牌 替代类型 描述 数据表
IXDN430MCI IXYS

完全替代

 Buffer/Inverter Based MOSFET Driver, 30A, PSFM5, TO-220, 5 PIN
IXDD430MCI IXYS

完全替代

 Buffer/Inverter Based MOSFET Driver, 30A, PSFM5, TO-220, 5 PIN
IXDN430CI IXYS

完全替代

 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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