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IXDI430YI

更新时间： 2024-01-06 23:02:40
品牌 Logo 应用领域
IXYS 驱动器MOSFET驱动器驱动程序和接口接口集成电路双极性晶体管
页数 文件大小 规格书
12页 782K
描述
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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中文翻译

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IXDI430YI 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：TO-263,
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.82Is Samacsys：N
高边驱动器：YES接口集成电路类型：BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
JESD-30 代码：R-PSSO-G5长度：9.975 mm
功能数量：1端子数量：5
最高工作温度：125 °C最低工作温度：-55 °C
标称输出峰值电流：30 A封装主体材料：PLASTIC/EPOXY
封装代码：TO-263封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：4.8 mm
最大供电电压：35 V最小供电电压：8.5 V
标称供电电压：18 V表面贴装：YES
温度等级：MILITARY端子形式：GULL WING
端子节距：1.7 mm端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.039 µs
接通时间：0.045 µs宽度：9.15 mm
Base Number Matches：1

IXDI430YI 数据手册

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IXDN430 / IXDI430 / IXDD430 / IXDS430  
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver  
General Description  
Features  
• Built using the advantages and compatibility  
of CMOS and IXYS HDMOSTM processes  
• Latch-UpProtected  
• High Peak Output Current: 30A Peak  
• Wide Operating Range: 8.5V to 35V  
• Under Voltage Lockout Protection  
• Ability to Disable Output under Faults  
• High Capacitive Load  
TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhigh  
current gate drivers specifically designed to drive MOSFETs  
and IGBTs to their minimum switching time and maximum  
practical frequency limits. The IXD_430 can source and sink  
30A of peak current while producing voltage rise and fall times  
of less than 30ns. The input of the drivers are compatible with  
TTL or CMOS and are fully immune to latch up over the entire  
operating range. Designed with small internal delays, cross  
conduction/current shoot-through is virtually eliminated in all  
configurations. Their features and wide safety margin in  
operatingvoltageandpowermakethedriversunmatchedin  
performanceandvalue.  
Drive Capability: 5600 pF in <25ns  
• Matched Rise And Fall Times  
• Low Propagation Delay Time  
• LowOutputImpedance  
• LowSupplyCurrent  
The IXD_430 incorporates a unique ability to disable the output  
under fault conditions. The standard undervoltage lockout is at  
12.5V which can also be set to 8.5V in the IXDS430SI. When a  
logical low is forced into the Enable inputs, both final output  
stage MOSFETs (NMOS and PMOS) are turned off. As a  
result, the output of the IXDD430 enters a tristate mode and  
enables a Soft Turn-Off of the MOSFET when a short circuit is  
detected. This helps prevent damage that could occur to the  
MOSFET if it were to be switched off abruptly due to a dv/dt  
over-voltagetransient.  
Applications  
• DrivingMOSFETsandIGBTs  
• MotorControls  
• LineDrivers  
• PulseGenerators  
• Local Power ON / OFF Switch  
• Switch Mode Power Supplies (SMPS)  
• DCtoDCConverters  
• PulseTransformerDriver  
• Limiting di/dt Under Short Circuit  
• Class D Switching Amplifiers  
TheIXDN430isconfiguredasanoninvertinggatedriver, andthe  
IXDI430isaninvertinggatedriver.TheIXDS430canbeconfigured  
eitherasanoninvertingorinvertingdriver.TheIXD_430areavailable  
inthestandard28-pinSIOC(SI-CT),5-pinTO-220(CI),andinthe  
TO-263(YI)surfacemountpackages.CTor'CoolTab'forthe28-  
pin SOIC package refers to the backside metal heatsink tab.  
Ordering Information  
Part Num ber  
IXDD430YI  
IXDD430CI  
IXDI430YI  
Package Type  
5-pin TO -263  
5-pin TO -220  
5-pin TO -263  
5-pin TO -220  
5-pin TO -263  
5-pin TO -220  
Tem p. Range  
Configuration  
Non Inverting with  
Enable  
-55°C to +125°  
-55°C to +125°  
-55°C to +125°  
Inverting  
IXDI430CI  
IXDN430YI  
IXDN430CI  
Non Inverting  
Inverting / Non  
Inverting with Enable  
and UVSEL  
-55°C to +125°  
IXDS430SI  
28-pin SO IC  
Copyright © IXYS CORPORATION 2004  
DS99045B(8/04)  
First Release  
1234567...12

中文翻译

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IXDI430YI 替代型号

型号 品牌 替代类型 描述 数据表
IXDI430MYI IXYS

完全替代

 Buffer/Inverter Based MOSFET Driver, 30A, PSSO5, TO-263, D2PAK-5
IXDN430MYI IXYS

完全替代

 Buffer/Inverter Based MOSFET Driver, 30A, PSSO5, TO-263, D2PAK-5

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