是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | TO-263, D2PAK-5 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.84 | 高边驱动器: | YES |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-PSSO-G5 |
JESD-609代码: | e3 | 长度: | 9.975 mm |
功能数量: | 1 | 端子数量: | 5 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
标称输出峰值电流: | 14 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TO-263 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 4.8 mm |
最大供电电压: | 25 V | 最小供电电压: | 4.5 V |
标称供电电压: | 18 V | 表面贴装: | YES |
温度等级: | MILITARY | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子节距: | 1.7 mm |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 35 |
断开时间: | 0.034 µs | 接通时间: | 0.033 µs |
宽度: | 9.15 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXDI430 | IXYS |
获取价格 |
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver | |
IXDI430CI | IXYS |
获取价格 |
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver | |
IXDI430MCI | IXYS |
获取价格 |
Buffer/Inverter Based MOSFET Driver, 30A, PSFM5, TO-220, 5 PIN | |
IXDI430MYI | IXYS |
获取价格 |
Buffer/Inverter Based MOSFET Driver, 30A, PSSO5, TO-263, D2PAK-5 | |
IXDI430YI | IXYS |
获取价格 |
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver | |
IXDI502 | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502D1 | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502D1T/R | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502PI | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDI502SIA | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |