ISL6615A PDF预览

ISL6615A

更新时间: 2025-09-19 14:58:15
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描述
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

ISL6615A 数据手册

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DATASHEET  
ISL6615A  
FN6608  
Rev 2.00  
April 13, 2012  
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features  
The ISL6615A is a high-speed MOSFET driver optimized to  
Features  
drive upper and lower power N-Channel MOSFETs in a  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
synchronous rectified buck converter topology. This driver,  
combined with an Intersil Digital or Analog multiphase PWM  
controller, forms a complete high frequency and high  
efficiency voltage regulator.  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
- LGATE Detection  
The ISL6615A drives both upper and lower gates over a range  
of 4.5V to 13.2V. This drive-voltage provides the flexibility  
necessary to optimize applications involving trade-offs  
between gate charge and conduction losses.  
- Auto-zero of r  
DS(ON)  
Conduction Offset Effect  
• Adjustable Gate Voltage for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
• Bootstrap Capacitor Overcharging Prevention  
The ISL6615A features 6A typical sink current for the low-side  
gate driver, enhancing the lower MOSFET gate hold-down  
capability during PHASE node rising edge, preventing power  
loss caused by the self turn-on of the lower MOSFET due to the  
high dV/dt of the switching node.  
• Supports High Switching Frequency (up to 1MHz)  
- 6A LGATE Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
• Support 5V PWM Input Logic  
An advanced adaptive zero shoot-through protection is  
integrated to prevent both the upper and lower MOSFETs from  
conducting simultaneously and to minimize the dead-time.  
The ISL6615A includes an overvoltage protection feature  
operational before VCC exceeds its turn-on threshold, at which  
the PHASE node is connected to the gate of the low side  
MOSFET (LGATE). The output voltage of the converter is then  
limited by the threshold of the low side MOSFET, which  
provides some protection to the load if the upper MOSFET(s) is  
shorted.  
• Tri-State PWM Input for Safe Output Stage Shutdown  
• Tri-State PWM Input Hysteresis for Applications with Power  
Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper PAD for Better Heat Spreading  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
The ISL6615A also features an input that recognizes a  
high-impedance state, working together with Intersil  
multiphase PWM controllers to prevent negative transients on  
the controlled output voltage when operation is suspended.  
This feature eliminates the need for the Schottky diode that  
may be utilized in a power system to protect the load from  
negative output voltage damage.  
• Pb-free (RoHS compliant)  
Applications  
• Optimized for POL DC/DC Converters for IBA Systems  
• Core Regulators for Intel® and AMD® Microprocessors  
• High Current Low-Profile DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
• Synchronous Rectification for Isolated Power Supplies  
Related Literature  
• Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
• Technical Brief TB389 “PCB Land Pattern Design and  
Surface Mount Guidelines for QFN Packages”  
FN6608 Rev 2.00  
April 13, 2012  
Page 1 of 13  

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