ISL6615ACBZ PDF预览

ISL6615ACBZ

更新时间: 2025-09-18 11:12:39
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英特矽尔 - INTERSIL 驱动器接口集成电路光电二极管
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12页 234K
描述
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

ISL6615ACBZ 数据手册

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High-Frequency 6A Sink Synchronous MOSFET  
Drivers with Protection Features  
ISL6615A  
Features  
• Dual MOSFET Drives for Synchronous Rectified  
Bridge  
The ISL6615A is a high-speed MOSFET driver optimized  
to drive upper and lower power N-Channel MOSFETs in a  
synchronous rectified buck converter topology. This  
driver, combined with an Intersil Digital or Analog  
multiphase PWM controller, forms a complete high  
frequency and high efficiency voltage regulator.  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
- LGATE Detection  
- Auto-zero of r  
DS(ON)  
Conduction Offset Effect  
The ISL6615A drives both upper and lower gates over a  
range of 4.5V to 13.2V. This drive-voltage provides the  
flexibility necessary to optimize applications involving  
trade-offs between gate charge and conduction losses.  
• Adjustable Gate Voltage for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 1MHz)  
- 6A LGATE Sinking Current Capability  
The ISL6615A features 6A typical sink current for the  
low-side gate driver, enhancing the lower MOSFET gate  
hold-down capability during PHASE node rising edge,  
preventing power loss caused by the self turn-on of the  
lower MOSFET due to the high dV/dt of the switching  
node.  
- Fast Rise/Fall Times and Low Propagation Delays  
• Support 5V PWM Input Logic  
Tri-State PWM Input for Safe Output Stage Shutdown  
Tri-State PWM Input Hysteresis for Applications with  
Power Sequencing Requirement  
An advanced adaptive zero shoot-through protection is  
integrated to prevent both the upper and lower MOSFETs  
from conducting simultaneously and to minimize the  
dead-time. The ISL6615A includes an overvoltage  
protection feature operational before VCC exceeds its  
turn-on threshold, at which the PHASE node is connected  
to the gate of the low side MOSFET (LGATE). The output  
voltage of the converter is then limited by the threshold  
of the low side MOSFET, which provides some protection  
to the load if the upper MOSFET(s) is shorted.  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper PAD for Better Heat  
Spreading  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
The ISL6615A also features an input that recognizes a  
high-impedance state, working together with Intersil  
multiphase PWM controllers to prevent negative  
transients on the controlled output voltage when  
operation is suspended. This feature eliminates the need  
for the Schottky diode that may be utilized in a power  
system to protect the load from negative output voltage  
damage.  
• Pb-free (RoHS compliant)  
Applications*(see page 10)  
• Optimized for POL DC/DC Converters for IBA  
Systems  
• Core Regulators for Intel® and AMD®  
Microprocessors  
• High Current Low-Profile DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
• Synchronous Rectification for Isolated Power  
Supplies  
Related Literature*(see page 10)  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Brief TB389 “PCB Land Pattern Design and  
Surface Mount Guidelines for QFN Packages”  
April 22, 2010  
FN6608.1  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2008, 2010. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  

ISL6615ACBZ 替代型号

型号 品牌 替代类型 描述 数据表
ISL6615AIBZ INTERSIL

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