ISL6615AIRZ-T13 PDF预览

ISL6615AIRZ-T13

更新时间: 2025-09-19 10:23:27
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动
页数 文件大小 规格书
12页 407K
描述
AND GATE BASED MOSFET DRIVER

ISL6615AIRZ-T13 数据手册

 浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第2页浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第3页浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第4页浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第5页浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第6页浏览型号ISL6615AIRZ-T13的Datasheet PDF文件第7页 
High-Frequency 6A Sink Synchronous MOSFET Drivers  
with Protection Features  
ISL6615A  
Features  
The ISL6615A is a high-speed MOSFET driver optimized to drive  
upper and lower power N-Channel MOSFETs in a synchronous  
rectified buck converter topology. This driver, combined with an  
Intersil Digital or Analog multiphase PWM controller, forms a  
complete high frequency and high efficiency voltage regulator.  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
- LGATE Detection  
- Auto-zero of r  
DS(ON)  
Conduction Offset Effect  
The ISL6615A drives both upper and lower gates over a range of  
4.5V to 13.2V. This drive-voltage provides the flexibility necessary  
to optimize applications involving trade-offs between gate charge  
and conduction losses.  
• Adjustable Gate Voltage for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
• Bootstrap Capacitor Overcharging Prevention  
The ISL6615A features 6A typical sink current for the low-side  
gate driver, enhancing the lower MOSFET gate hold-down  
capability during PHASE node rising edge, preventing power loss  
caused by the self turn-on of the lower MOSFET due to the high  
dV/dt of the switching node.  
• Supports High Switching Frequency (up to 1MHz)  
- 6A LGATE Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
• Support 5V PWM Input Logic  
An advanced adaptive zero shoot-through protection is integrated  
to prevent both the upper and lower MOSFETs from conducting  
simultaneously and to minimize the dead-time. The ISL6615A  
includes an overvoltage protection feature operational before  
VCC exceeds its turn-on threshold, at which the PHASE node is  
connected to the gate of the low side MOSFET (LGATE). The  
output voltage of the converter is then limited by the threshold of  
the low side MOSFET, which provides some protection to the load  
if the upper MOSFET(s) is shorted.  
• Tri-State PWM Input for Safe Output Stage Shutdown  
• Tri-State PWM Input Hysteresis for Applications with Power  
Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper PAD for Better Heat Spreading  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB Efficiency  
and Thinner in Profile  
The ISL6615A also features an input that recognizes a  
high-impedance state, working together with Intersil multiphase  
PWM controllers to prevent negative transients on the controlled  
output voltage when operation is suspended. This feature  
eliminates the need for the Schottky diode that may be utilized in  
a power system to protect the load from negative output voltage  
damage.  
• Pb-free (RoHS compliant)  
Applications  
• Optimized for POL DC/DC Converters for IBA Systems  
• Core Regulators for Intel® and AMD® Microprocessors  
• High Current Low-Profile DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
• Synchronous Rectification for Isolated Power Supplies  
Related Literature  
• Technical Brief TB363 “Guidelines for Handling and Processing  
Moisture Sensitive Surface Mount Devices (SMDs)”  
• Technical Brief TB389 “PCB Land Pattern Design and Surface  
Mount Guidelines for QFN Packages”  
April 13, 2012  
FN6608.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2008, 2010, 2012. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  

与ISL6615AIRZ-T13相关器件

型号 品牌 获取价格 描述 数据表
ISL6615CBZ INTERSIL

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615CBZ RENESAS

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615CBZ-T RENESAS

获取价格

最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615CRZ RENESAS

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Ra
ISL6615CRZ INTERSIL

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615CRZ-T RENESAS

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Ra
ISL6615IBZ INTERSIL

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615IBZ RENESAS

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615IBZ-T RENESAS

获取价格

最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615IRZ RENESAS

获取价格

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Ra