Datasheet > ISL6615IBZ-T

ISL6615IBZ-T

更新时间： 2025-09-19 19:17:39

品牌	Logo	应用领域
瑞萨 - RENESAS		栅驱动驱动器栅极
页数	文件大小	规格书
11页	626K
描述
最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5A;峰值输出拉电流(A):4A;驱动配置:半桥;通道类型:同步;驱动器数:2;栅极类型:N 沟道 MOSFET;上升时间(ns):13ns;下降时间(ns):10ns;元器件封装:8-SOIC;

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ISL6615IBZ-T 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP, SOP8,.25
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.61	高边驱动器：	YES
接口集成电路类型：	AND GATE BASED MOSFET DRIVER	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.9 mm
湿度敏感等级：	3	功能数量：	1
端子数量：	8	最高工作温度：	85 °C
最低工作温度：	-40 °C	标称输出峰值电流：	6 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	6.8 V
标称供电电压：	12 V	电源电压1-最大：	13.2 V
电源电压1-分钟：	5 V	电源电压1-Nom：	12 V
表面贴装：	YES	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3.9 mm
Base Number Matches：	1

ISL6615IBZ-T 数据手册

DATASHEET

ISL6615

FN6481

Rev 0.00

April 24, 2008

High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

The ISL6615 is a high-speed MOSFET driver optimized to

drive upper and lower power N-Channel MOSFETs in a

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

synchronous rectified buck converter topology. This driver,

combined with an Intersil Digital or Analog multiphase PWM

controller, forms a complete high frequency and high

efficiency voltage regulator.

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- LGATE Detection

- Auto-zero of r

DS(ON)

Conduction Offset Effect

The ISL6615 drives both upper and lower gates over a range

of 4.5V to 13.2V. This drive-voltage provides the flexibility

necessary to optimize applications involving trade-offs

between gate charge and conduction losses.

• Adjustable Gate Voltage for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

The ISL6615 features 6A typical sink current for the low-side

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power

loss caused by the self turn-on of the lower MOSFET due to

the high dV/dt of the switching node.

• Supports High Switching Frequency (up to 1MHz)

- 6A LGATE Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Support 3.3V PWM Input logic

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. The ISL6615 includes an overvoltage protection

feature operational before VCC exceeds its turn-on

threshold, at which the PHASE node is connected to the

gate of the low side MOSFET (LGATE). The output voltage

of the converter is then limited by the threshold of the low

side MOSFET, which provides some protection to the load if

the upper MOSFET(s) is shorted.

• Tri-State PWM Input for Safe Output Stage Shutdown

• Tri-State PWM Input Hysteresis for Applications with

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper PAD for Better Heat

Spreading

• Dual Flat No-Lead (DFN) Package

The ISL6615 also features an input that recognizes a

high-impedance state, working together with Intersil

multiphase PWM controllers to prevent negative transients

on the controlled output voltage when operation is

suspended. This feature eliminates the need for the Schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel® and AMD® Microprocessors

• High Current Low-Profile DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

• Synchronous Rectification for Isolated Power Supplies

Related Literature

Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

Technical Brief TB389 “PCB Land Pattern Design and

Surface Mount Guidelines for QFN Packages”

FN6481 Rev 0.00

April 24, 2008

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与ISL6615IBZ-T相关器件

型号	品牌	获取价格	描述	数据表
ISL6615IRZ	RENESAS	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Ra
ISL6615IRZ	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615IRZ-T	RENESAS	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Ra
ISL6617	INTERSIL	获取价格	Dual 6-Phase + 1-Phase PWM Controller for VR12/IMVP7 Applications
ISL6617	RENESAS	获取价格	PWM Doubler with Phase Shedding Function and Output Monitoring Feature
ISL6617A	RENESAS	获取价格	PWM Doubler with Output Monitoring Feature
ISL6617AFRZ	RENESAS	获取价格	PWM Doubler with Output Monitoring Feature
ISL6617AFRZ-T	RENESAS	获取价格	PWM Doubler with Output Monitoring Feature
ISL6617CRZ	INTERSIL	获取价格	PWM Doubler with Phase Shedding Function and Output Monitoring Feature
ISL6617CRZ	RENESAS	获取价格	PWM倍增器PMIC10-DFN（3x3）

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