Datasheet > ISL6615AFRZ

ISL6615AFRZ

更新时间： 2025-09-18 20:33:43

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
12页	341K
描述
AND GATE BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10

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技术参数
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ISL6615AFRZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DFN	包装说明：	HVSON, SOLCC10,.12,20
针数：	10	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.5	Is Samacsys：	N
高边驱动器：	YES	接口集成电路类型：	AND GATE BASED MOSFET DRIVER
JESD-30 代码：	S-PDSO-N10	JESD-609代码：	e3
长度：	3 mm	湿度敏感等级：	3
功能数量：	1	端子数量：	10
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装等效代码：	SOLCC10,.12,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	6.8 V
标称供电电压：	12 V	电源电压1-最大：	12 V
电源电压1-分钟：	5 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3 mm	Base Number Matches：	1

ISL6615AFRZ 数据手册

High-Frequency 6A Sink Synchronous MOSFET Drivers

with Protection Features

ISL6615A

Features

The ISL6615A is a high-speed MOSFET driver optimized to drive

upper and lower power N-Channel MOSFETs in a synchronous

rectified buck converter topology. This driver, combined with an

Intersil Digital or Analog multiphase PWM controller, forms a

complete high frequency and high efficiency voltage regulator.

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- LGATE Detection

- Auto-zero of r

DS(ON)

Conduction Offset Effect

The ISL6615A drives both upper and lower gates over a range of

4.5V to 13.2V. This drive-voltage provides the flexibility necessary

to optimize applications involving trade-offs between gate charge

and conduction losses.

• Adjustable Gate Voltage for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

The ISL6615A features 6A typical sink current for the low-side

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power loss

caused by the self turn-on of the lower MOSFET due to the high

dV/dt of the switching node.

• Supports High Switching Frequency (up to 1MHz)

- 6A LGATE Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Support 5V PWM Input Logic

An advanced adaptive zero shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from conducting

simultaneously and to minimize the dead-time. The ISL6615A

includes an overvoltage protection feature operational before

VCC exceeds its turn-on threshold, at which the PHASE node is

connected to the gate of the low side MOSFET (LGATE). The

output voltage of the converter is then limited by the threshold of

the low side MOSFET, which provides some protection to the load

if the upper MOSFET(s) is shorted.

• Tri-State PWM Input for Safe Output Stage Shutdown

• Tri-State PWM Input Hysteresis for Applications with Power

Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper PAD for Better Heat Spreading

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB Efficiency

and Thinner in Profile

The ISL6615A also features an input that recognizes a

high-impedance state, working together with Intersil multiphase

PWM controllers to prevent negative transients on the controlled

output voltage when operation is suspended. This feature

eliminates the need for the Schottky diode that may be utilized in

a power system to protect the load from negative output voltage

damage.

• Pb-free (RoHS compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel® and AMD® Microprocessors

• High Current Low-Profile DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

• Synchronous Rectification for Isolated Power Supplies

Related Literature

• Technical Brief TB363 “Guidelines for Handling and Processing

Moisture Sensitive Surface Mount Devices (SMDs)”

• Technical Brief TB389 “PCB Land Pattern Design and Surface

Mount Guidelines for QFN Packages”

April 13, 2012

FN6608.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

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与ISL6615AFRZ相关器件

型号	品牌	获取价格	描述	数据表
ISL6615AFRZ-T	RENESAS	获取价格	AND GATE BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10
ISL6615AFRZ-T7	RENESAS	获取价格	AND GATE BASED MOSFET DRIVER
ISL6615AIBZ	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615AIBZ	RENESAS	获取价格	最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615AIBZ-T	RENESAS	获取价格	最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615AIBZ-T13	RENESAS	获取价格	AND GATE BASED MOSFET DRIVER
ISL6615AIRZ	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615AIRZ	RENESAS	获取价格	最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615AIRZ-T	RENESAS	获取价格	最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615AIRZ-T13	RENESAS	获取价格	AND GATE BASED MOSFET DRIVER

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