Datasheet > ISL6614IBZ-T

ISL6614IBZ-T

更新时间： 2025-09-17 22:36:51

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器接口集成电路光电二极管
页数	文件大小	规格书
12页	330K
描述
Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

ISL6614IBZ-T 数据手册

ISL6614

Data Sheet

July 25, 2005

FN9155.4

Dual Advanced Synchronous Rectified

Buck MOSFET Drivers with Protection

Features

The ISL6614 integrates two ISL6613 MOSFET drivers and is

specifically designed to drive two independent power

channels in a Multi-Phase interleaved buck converter

topology. These drivers combined with HIP63xx or ISL65xx

Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

Features

• Pin-to-pin Compatible with HIP6602 SOIC family for Better

Performance and Extra Protection Features

• Quad N-Channel MOSFET Drives for Two Synchronous

Rectified Bridges

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of r

Conduction Offset Effect

DS(ON)

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 1MHz)

- 3A Sinking Current Capability

The ISL6614 drives both the upper and lower gates

simultaneously over a range from 5V to 12V. This drive-

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses.

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage +Protection

• VCC Undervoltage Protection

• Over Temperature Protection (OTP) with 42°C Hysteresis

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• QFN Package:

- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat

No Leads - Package Outline

- Near Chip Scale Package footprint, which improves

PCB efficiency and has a thinner profile

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during startup. The over-

temperature protection feature prevents failures resulting

from excessive power dissipation by shutting off the outputs

when its junction temperature exceeds 150°C (typically). The

driver resets once its junction temperature returns to 108°C

(typically).

• Pb-Free Plus Anneal Available (RoHS Compliant)

The ISL6614 also features a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC-DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief 400 and 417 for Power Train Design,

Layout Guidelines, and Feedback Compensation Design

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...12

中文翻译

下载PDF

ISL6614IBZ-T 替代型号

型号	品牌	替代类型	描述	数据表
ISL6614CBZ-T	INTERSIL	完全替代	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614CBZA	INTERSIL	完全替代	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IBZ	INTERSIL	完全替代	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

与ISL6614IBZ-T相关器件

型号	品牌	获取价格	描述	数据表
ISL6614IBZ-TR5238	RENESAS	获取价格	最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IBZR5238	RENESAS	获取价格	最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IR	INTERSIL	获取价格	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IR	RENESAS	获取价格	最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IR-T	INTERSIL	获取价格	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IR-T	RENESAS	获取价格	2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, PLASTIC, MO-220VGGC, QFN-16
ISL6614IRZ	INTERSIL	获取价格	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IRZ	RENESAS	获取价格	2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-22
ISL6614IRZ-T	INTERSIL	获取价格	Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IRZ-T	RENESAS	获取价格	2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-22

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6614IBZ-T

ISL6614IBZ-T 数据手册

ISL6614IBZ-T 替代型号

与ISL6614IBZ-T相关器件

与ISL6614IBZ-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6614IBZ-T

ISL6614IBZ-T 数据手册

ISL6614IBZ-T 替代型号

与ISL6614IBZ-T相关器件

与ISL6614IBZ-T相关文章

您还可以找

您在本页遇到什么问题？