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ISL6614IBZ-T

更新时间： 2025-09-17 22:36:51
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器接口集成电路光电二极管
页数 文件大小 规格书
12页 330K
描述
Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

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ISL6614IBZ-T 数据手册

 浏览型号ISL6614IBZ-T的Datasheet PDF文件第2页浏览型号ISL6614IBZ-T的Datasheet PDF文件第3页浏览型号ISL6614IBZ-T的Datasheet PDF文件第4页浏览型号ISL6614IBZ-T的Datasheet PDF文件第6页浏览型号ISL6614IBZ-T的Datasheet PDF文件第7页浏览型号ISL6614IBZ-T的Datasheet PDF文件第8页 
ISL6614  
Absolute Maximum Ratings  
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V  
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V  
Thermal Information  
Thermal Resistance (Typical Notes 1, 2, 3)  
θ
(°C/W)  
θ
(°C/W)  
JA  
JC  
N/A  
SOIC Package (Note 1)  
90  
BOOT Voltage (V  
BOOT-GND  
). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V  
QFN Package (Notes 2, 3). . . . . . . . . .  
46  
8.5  
Input Voltage (V  
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V  
PWM  
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C  
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C  
(SOIC - Lead Tips Only)  
UGATE. . . . . . . . . . . . . . . . . . . V  
- 0.3V  
to V  
+ 0.3V  
+ 0.3V  
+ 0.3V  
+ 0.3V  
PHASE  
DC  
BOOT  
BOOT  
V
- 3.5V (<100ns Pulse Width, 2µJ) to V  
PHASE  
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V  
to V  
PVCC  
DC  
GND - 5V (<100ns Pulse Width, 2µJ) to V  
PVCC  
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V  
to 15V  
DC  
BOOT-GND  
DC  
GND - 8V (<400ns, 20µJ) to 30V (<200ns, V  
<36V)  
ESD Rating  
Human Body Model . . . . . . . . . . . . . . . . . . . . Class I JEDEC STD  
Recommended Operating Conditions  
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . .-40°C to 85°C  
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C  
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%  
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V ±10%  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
1. θ is measured with the component mounted on a high effective thermal conductivity test board in free air.  
JA  
2. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
3. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
VCC SUPPLY CURRENT  
Bias Supply Current  
I
f
f
= 300kHz, V  
= 300kHz, V  
= 12V  
= 12V  
-
-
7.1  
9.7  
-
-
mA  
mA  
VCC  
PWM  
PWM  
PVCC  
PVCC  
Gate Drive Bias Current  
POWER-ON RESET AND ENABLE  
VCC Rising Threshold  
I
PVCC  
0°C to 85°C  
-40°C to 85°C  
0°C to 85°C  
-40°C to 85°C  
9.35  
8.35  
7.35  
6.35  
9.80  
10.05  
10.05  
8.00  
V
V
V
V
-
7.60  
-
VCC Falling Threshold  
8.00  
PWM INPUT (See Timing Diagram on Page 8)  
Input Current  
I
V
V
= 5V  
= 0V  
-
450  
-400  
3.00  
2.00  
-
µA  
µA  
V
PWM  
PWM  
PWM  
-
-
PWM Rising Threshold  
VCC = 12V  
VCC = 12V  
VCC = 12V  
VCC = 12V  
VCC = 12V  
VCC = 12V  
VCC = 12V  
-
-
PWM Falling Threshold  
-
-
V
Typical Three-State Shutdown Window  
Three-State Lower Gate Falling Threshold  
Three-State Lower Gate Rising Threshold  
Three-State Upper Gate Rising Threshold  
Three-State Upper Gate Falling Threshold  
Shutdown Holdoff Time  
1.80  
2.40  
V
-
-
-
-
-
-
1.50  
1.00  
3.20  
2.60  
245  
26  
-
-
-
-
-
-
V
V
V
V
t
ns  
ns  
TSSHD  
UGATE Rise Time  
t
V
= 12V, 3nF Load, 10% to 90%  
PVCC  
RU  
FN9155.4  
5
July 25, 2005  
12345678...12

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ISL6614IBZ-T 替代型号

型号 品牌 替代类型 描述 数据表
ISL6614CBZ-T INTERSIL

完全替代

 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614CBZA INTERSIL

完全替代

 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IBZ INTERSIL

完全替代

 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

与ISL6614IBZ-T相关器件

型号 品牌 获取价格 描述 数据表
ISL6614IBZ-TR5238 RENESAS

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 		最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IBZR5238 RENESAS

获取价格

 		最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IR INTERSIL

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 		Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IR RENESAS

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 		最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IR-T INTERSIL

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 		Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IR-T RENESAS

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 		2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, PLASTIC, MO-220VGGC, QFN-16
ISL6614IRZ INTERSIL

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 		Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IRZ RENESAS

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 		2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-22
ISL6614IRZ-T INTERSIL

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 		Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6614IRZ-T RENESAS

获取价格

 		2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-22

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