Datasheet > ISL6614IRZ-T

ISL6614IRZ-T

更新时间： 2025-09-18 20:24:31

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动接口集成电路驱动器
页数	文件大小	规格书
12页	602K
描述
2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-220VGGC, QFN-16

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ISL6614IRZ-T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFN
包装说明：	HVQCCN, LCC16,.16SQ,25	针数：	16
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.25
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	S-PQCC-N16	JESD-609代码：	e3
长度：	4 mm	湿度敏感等级：	3
功能数量：	2	端子数量：	16
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVQCCN
封装等效代码：	LCC16,.16SQ,25	封装形状：	SQUARE
封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	峰值回流温度（摄氏度）：	260
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	10.8 V
标称供电电压：	12 V	电源电压1-最大：	12 V
电源电压1-分钟：	5 V	表面贴装：	YES
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	40
宽度：	4 mm	Base Number Matches：	1

ISL6614IRZ-T 数据手册

DATASHEET

ISL6614

FN9155

Rev.5.00

May 5, 2008

Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection

Features

The ISL6614 integrates two ISL6613 MOSFET drivers and is

specifically designed to drive two independent power

Features

• Pin-to-pin Compatible with HIP6602 SOIC Family for

Better Performance and Extra Protection Features

channels in a Multi-Phase interleaved buck converter

topology. These drivers combined with HIP63xx or ISL65xx

Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

• Quad N-Channel MOSFET Drives for Two Synchronous

Rectified Bridges

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

The ISL6614 drives both the upper and lower gates

simultaneously over a range from 5V to 12V. This drive

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses.

- Auto-zero of r

DS(ON)

Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during startup. The over-

temperature protection feature prevents failures resulting

from excessive power dissipation by shutting off the outputs

when its junction temperature exceeds +150°C (typically).

The driver resets once its junction temperature returns to

+108°C (typically).

• Supports High Switching Frequency (up to 1MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage +Protection

• VCC Undervoltage Protection

• Over-Temperature Protection (OTP) with +42°C Hysteresis

• Expandable Bottom Copper Pad for Enhanced Heat Sinking

• QFN Package:

- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat

No Leads - Package Outline

The ISL6614 also features a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

- Near Chip Scale Package Footprint, which Improves

PCB Efficiency and has a Thinner Profile

• Pb-free Available (RoHS compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief 400 and 417 for Power Train Design,

Layout Guidelines, and Feedback Compensation Design

FN9155 Rev.5.00

May 5, 2008

Page 1 of 12

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与ISL6614IRZ-T相关器件

型号	品牌	获取价格	描述	数据表
ISL6614IRZ-TR5238	RENESAS	获取价格	最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6614IRZR5238	RENESAS	获取价格	最小供电电压(V):10.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):1.
ISL6615	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615	RENESAS	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615A	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615A	RENESAS	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615ACBZ	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
ISL6615ACBZ	RENESAS	获取价格	最小供电电压(V):6.8V;最大供电电压(V):13.2V;峰值输出灌电流(A):2.5
ISL6615ACBZ-T	RENESAS	获取价格	6A AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
ISL6615ACRZ	INTERSIL	获取价格	High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

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