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ISL6612A PDF预览

ISL6612A

更新时间: 2024-09-14 22:55:35
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英特矽尔 - INTERSIL 驱动器
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12页 324K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

ISL6612A 数据手册

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ISL6612A, ISL6613A  
®
Data Sheet  
July 25, 2005  
FN9159.4  
Advanced Synchronous Rectified Buck  
MOSFET Drivers with Pre-POR OVP  
Features  
• Pin-to-pin Compatible with HIP6601 SOIC family  
The ISL6612A and ISL6613A are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with HIP63xx or  
ISL65xx Multi-Phase Buck PWM controllers and N-Channel  
MOSFETs form complete core-voltage regulator solutions for  
advanced microprocessors.  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
- Auto-zero of r  
Conduction Offset Effect  
DS(ON)  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
The ISL6612A drives the upper gate to 12V, while the lower  
gate can be independently driven over a range from 5V to  
12V. The ISL6613A drives both upper and lower gates over  
a range of 5V to 12V. This drive-voltage provides the  
flexibility necessary to optimize applications involving trade-  
offs between gate charge and conduction losses.  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
• Three-State PWM Input for Output Stage Shutdown  
An advanced adaptive zero shoot-through protection is  
integrated to prevent both the upper and lower MOSFETs  
from conducting simultaneously and to minimize the dead  
time. These products add an overvoltage protection feature  
operational before VCC exceeds its turn-on threshold, at  
which the PHASE node is connected to the gate of the low  
side MOSFET (LGATE). The output voltage of the converter  
is then limited by the threshold of the low side MOSFET,  
which provides some protection to the microprocessor if the  
upper MOSFET(s) is shorted during initial startup.  
• Three-State PWM Input Hysteresis for Applications With  
Power Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
Applications  
• Core Regulators for Intel® and AMD® Microprocessors  
• High Current DC-DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Briefs TB400 and TB417 for Power Train  
Design, Layout Guidelines, and Feedback Compensation  
Design  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2005. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  

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