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ISL6610AIBZ PDF预览

ISL6610AIBZ

更新时间: 2024-11-05 20:16:35
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
11页 274K
描述
4A BUF OR INV BASED MOSFET DRIVER, PDSO14, ROHS COMPLIANT, PLASTIC, MS-012AB, SOIC-14

ISL6610AIBZ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:5.61Is Samacsys:N
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G14JESD-609代码:e3
长度:8.65 mm湿度敏感等级:2
功能数量:1端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:4 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

ISL6610AIBZ 数据手册

 浏览型号ISL6610AIBZ的Datasheet PDF文件第2页浏览型号ISL6610AIBZ的Datasheet PDF文件第3页浏览型号ISL6610AIBZ的Datasheet PDF文件第4页浏览型号ISL6610AIBZ的Datasheet PDF文件第5页浏览型号ISL6610AIBZ的Datasheet PDF文件第6页浏览型号ISL6610AIBZ的Datasheet PDF文件第7页 
ISL6610, ISL6610A  
®
Data Sheet  
November 22, 2006  
FN6395.0  
Dual Synchronous Rectified MOSFET  
Drivers  
Features  
• 5V Quad N-Channel MOSFET Drives for Two  
Synchronous Rectified Bridges  
The ISL6610, ISL6610A integrates two ISL6609, ISL6609A  
drivers with enable function removed and is optimized to  
drive two independent power channels in a synchronous-  
rectified buck converter topology. These drivers, combined  
with an Intersil ISL63xx or ISL65xx multiphase PWM  
controller, form a complete high efficiency voltage regulator  
at high switching frequency.  
• Pin-to-pin Compatible with ISL6614 (12V Drive)  
• Adaptive Shoot-Through Protection  
• 0.4Ω On-Resistance and 4A Sink Current Capability  
• Supports High Switching Frequency  
- Fast Output Rise and Fall  
The IC is biased by a single low voltage supply (5V),  
minimizing driver switching losses in high MOSFET gate  
capacitance and high switching frequency applications.  
Each driver is capable of driving a 3nF load with less than  
10ns rise/fall time. Bootstrapping of the upper gate driver is  
implemented via an internal low forward drop diode,  
reducing implementation cost, complexity, and allowing the  
use of higher performance, cost effective N-Channel  
MOSFETs. Adaptive shoot-through protection is integrated  
to prevent both MOSFETs from conducting simultaneously.  
- Low Tri-State Hold-Off Time  
• BOOT Capacitor Overcharge Prevention (ISL6610A)  
• Low V Internal Bootstrap Diode  
F
• Power-On Reset  
• QFN Package  
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat  
No Leads-Product Outline  
- Near Chip-Scale Package Footprint; Improves PCB  
Utilization, Thinner Profile  
The ISL6610, ISL6610A features 4A typical sink current for  
the lower gate driver, enhancing the lower MOSFET gate  
hold-down capability during PHASE node rising edge,  
preventing power loss caused by the self turn-on of the lower  
MOSFET due to the high dV/dt of the switching node.  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
Related Literature  
Technical Brief TB389 “PCB Land Pattern Design and  
Surface Mount Guidelines for QFN (MLFP) Packages”  
The ISL6610, ISL6610A also features an input that  
recognizes a high-impedance state, working together with  
Intersil multiphase PWM controllers to prevent negative  
transients on the controlled output voltage when operation is  
suspended. This feature eliminates the need for the schottky  
diode that may be utilized in a power system to protect the  
load from negative output voltage damage.  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Ordering Information  
PART  
NUMBER  
(Note)  
TEMP.  
RANGE  
(°C)  
PART  
MARKING  
PACKAGE  
(Pb-Free)  
PKG.  
DWG. #  
In addition, the ISL6610As bootstrap function is designed to  
prevent the BOOT capacitor from overcharging, should  
excessively large negative swings occur at the transitions of  
the PHASE node.  
ISL6610CBZ  
ISL6610CRZ  
ISL6610IBZ  
ISL6610IRZ  
6610CBZ  
66 10CRZ  
6610IBZ  
0 to +70 14 Ld SOIC  
M14.15  
0 to +70 16 Ld 4x4 QFN L16.4x4  
-40 to +85 14 Ld SOIC M14.15  
-40 to +85 16 Ld 4x4 QFN L16.4x4  
0 to +70 14 Ld SOIC M14.15  
ISL6610ACRZ 66 10ACRZ 0 to +70 16 Ld 4x4 QFN L16.4x4  
ISL6610AIBZ 6610AIBZ -40 to +85 14 Ld SOIC M14.15  
66 10IRZ  
Applications  
ISL6610ACBZ 6610ACBZ  
• Core Voltage Supplies for Intel® and AMD®  
Microprocessors  
• High Frequency Low Profile High Efficiency DC/DC  
Converters  
ISL6610AIRZ 66 10AIRZ -40 to +85 16 Ld 4x4 QFN L16.4x4  
• High Current Low Voltage DC/DC Converters  
Add “-T” suffix for tape and reel.  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free  
material sets; molding compounds/die attach materials and 100%  
matte tin plate termination finish, which are RoHS compliant and  
compatible with both SnPb and Pb-free soldering operations. Intersil  
Pb-free products are MSL classified at Pb-free peak reflow  
temperatures that meet or exceed the Pb-free requirements of  
IPC/JEDEC J STD-020.  
• Synchronous Rectification for Isolated Power Supplies  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2006. All Rights Reserved  
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.  

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