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ISL6612 PDF预览

ISL6612

更新时间: 2024-11-06 02:57:39
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瑞萨 - RENESAS /
页数 文件大小 规格书
12页 601K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

ISL6612 数据手册

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DATASHEET  
ISL6612, ISL6613  
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features  
FN9153  
Rev 9.00  
June 15, 2010  
The ISL6612 and ISL6613 are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
Features  
• Pin-to-pin Compatible with HIP6601 SOIC family for Better  
Performance and Extra Protection Features  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with HIP63xx or  
ISL65xx Multi-Phase Buck PWM controllers and N-Channel  
MOSFETs form complete core-voltage regulator solutions for  
advanced microprocessors.  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
The ISL6612 drives the upper gate to 12V, while the lower  
gate can be independently driven over a range from 5V to  
12V. The ISL6613 drives both upper and lower gates over a  
range of 5V to 12V. This drive-voltage provides the flexibility  
necessary to optimize applications involving trade-offs  
between gate charge and conduction losses.  
- Auto-zero of r  
DS(ON)  
Conduction Offset Effect  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
An advanced adaptive zero shoot-through protection is  
integrated to prevent both the upper and lower MOSFETs from  
conducting simultaneously and to minimize the dead time.  
These products add an overvoltage protection feature  
operational before VCC exceeds its turn-on threshold, at which  
the PHASE node is connected to the gate of the low side  
MOSFET (LGATE). The output voltage of the converter is then  
limited by the threshold of the low side MOSFET, which  
provides some protection to the microprocessor if the upper  
MOSFET(s) is shorted during startup. The over-temperature  
protection feature prevents failures resulting from excessive  
power dissipation by shutting off the outputs when its junction  
temperature exceeds +150°C (typically). The driver resets once  
its junction temperature returns to +108°C (typically).  
- Fast Rise/Fall Times and Low Propagation Delays  
• Three-State PWM Input for Output Stage Shutdown  
• Three-State PWM Input Hysteresis for Applications With  
Power Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Over Temperature Protection (OTP) with +42°C  
Hysteresis  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free Available (RoHS Compliant)  
Applications  
• Core Regulators for Intel® and AMD® Microprocessors  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Brief TB417 for Power Train Design, Layout  
Guidelines, and Feedback Compensation Design  
FN9153 Rev 9.00  
June 15, 2010  
Page 1 of 12  

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