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ISL6609A PDF预览

ISL6609A

更新时间: 2024-09-14 04:58:47
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动器
页数 文件大小 规格书
11页 322K
描述
Synchronous Rectified MOSFET Driver

ISL6609A 数据手册

 浏览型号ISL6609A的Datasheet PDF文件第2页浏览型号ISL6609A的Datasheet PDF文件第3页浏览型号ISL6609A的Datasheet PDF文件第4页浏览型号ISL6609A的Datasheet PDF文件第5页浏览型号ISL6609A的Datasheet PDF文件第6页浏览型号ISL6609A的Datasheet PDF文件第7页 
ISL6609, ISL6609A  
®
Data Sheet  
March 6, 2006  
FN9221.1  
Synchronous Rectified MOSFET Driver  
Features  
• Drives Two N-Channel MOSFETs  
The ISL6609, ISL6609A is a high frequency, MOSFET driver  
optimized to drive two N-Channel power MOSFETs in a  
synchronous-rectified buck converter topology. This driver  
combined with an Intersil ISL63xx or ISL65xx multiphase  
PWM controller forms a complete single-stage core-voltage  
regulator solution with high efficiency performance at high  
switching frequency for advanced microprocessors.  
• Adaptive Shoot-Through Protection  
• 0.4On-Resistance and 4A Sink Current Capability  
• Supports High Switching Frequency  
- Fast Output Rise and Fall  
- Ultra Low Three-State Hold-Off Time (20ns)  
The IC is biased by a single low voltage supply (5V),  
minimizing driver switching losses in high MOSFET gate  
capacitance and high switching frequency applications.  
Each driver is capable of driving a 3nF load with less than  
10ns rise/fall time. Bootstrapping of the upper gate driver is  
implemented via an internal low forward drop diode,  
reducing implementation cost, complexity, and allowing the  
use of higher performance, cost effective N-Channel  
MOSFETs. Adaptive shoot-through protection is integrated  
to prevent both MOSFETs from conducting simultaneously.  
• ISL6605 Replacement with Enhanced Performance  
• BOOT Capacitor Overcharge Prevention (ISL6609A)  
• Low V Internal Bootstrap Diode  
F
• Low Bias Supply Current  
• Enable Input and Power-On Reset  
• QFN Package  
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat  
No Leads-Product Outline  
The ISL6609, ISL6609A features 4A typical sink current for  
the lower gate driver, enhancing the lower MOSFET gate  
hold-down capability during PHASE node rising edge,  
preventing power loss caused by the self turn-on of the lower  
MOSFET due to the high dV/dt of the switching node.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
Applications  
• Core Voltage Supplies for Intel® and AMD®  
Microprocessors  
The ISL6609, ISL6609A also features an input that  
recognizes a high-impedance state, working together with  
Intersil multiphase PWM controllers to prevent negative  
transients on the controlled output voltage when operation is  
suspended. This feature eliminates the need for the schottky  
diode that may be utilized in a power system to protect the  
load from negative output voltage damage. In addition, the  
ISL6609A’s bootstrap function is designed to prevent the  
BOOT capacitor from overcharging, should excessively large  
negative swings occur at the transitions of the PHASE node.  
• High Frequency Low Profile High Efficiency DC/DC  
Converters  
• High Current Low Voltage DC/DC Converters  
• Synchronous Rectification for Isolated Power Supplies  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
1
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved. Intel® is a registered trademark of Intel Corporation.  
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.  

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