Datasheet > ISA1993AS1

ISA1993AS1

更新时间： 2024-02-06 22:05:21

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	370K
描述
SMALL-SIGNAL TRANSISTOR

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中文翻译

获取价格

数据手册

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ISA1993AS1 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

ISA1993AS1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(FRAME TYPE)

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

ISA1993AS1 is mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

4.0

0.1

0.45

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=max-0.3V（@Ic=-100mA、IB=-10mA）

1.27 1.27

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

① ② ③

APPLICATION

small type machine low frequency voltage Amplify application.

JEITA：

JEDEC：

TERMINAL CONNECTER

①：EMITTER

②：COLLECTOR

③：BASE

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

Ratings

-50

Unit

MARKING

-50

A 9 3

-6

-200

℃

□□

P_c

Collector dissipation

450

T_j

Junction temperature

Storage temperature

＋150

-55～＋150

hFE アイテム

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

-50

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

NoiseFigure

V(BR)CEO

ICBO

IEBO

I_C= -100μA , RBE= ∞

V _CB= -50V , I _E= 0mA

V _EB= -6V , I _C= 0mA

μA

-0.1

500

hFE

_CE= -6V , I_C= -1mA

_CE= -6V , I_C= -0.1mA

150

hFE

VCE(sat) I _C= -100mA , I _B= -10mA

-0.3

Cob

_CE= -6V , I _E= 10mA

200

4.0

MHz

V _CB= -6V , I _E= 0mA,f=1MHz

V _CE= -6V , I _E= 0.3mA,f=100Hz,RG=10kΩ

※） It shows hFE classification in below table.

Item

150～300

250～500

hFE item

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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