ISA2166AU1
PRELIMINARY
※This datasheet is possibility of change.
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Because this device is developing now.
SILICON PNP EPITAXIAL TYPE
Unit:mm
OUTLINE DRAWING
DESCRIPTION
1.5
0.8
ISA2166AU1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low VCE(sat).
0.35
0.35
①
②
FEATURE
③
●High collector current
I
C(MAX)=-500mA
●Low collector to emitter saturation voltage
VCE(sat)<-0.4Vmax(IC=-150mA, IB=-15mA)
APPLICATION
TERMINAL CONNECTOR
①:BASE
②:EMITTER
For switching application, small type motor drive application.
JEITA:SC-75A
JEDEC: -
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
MARKING
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Ratings
-60
Unit
V
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Type Name
-60
V
-5
V
-500
150
mA
mW
℃
℃
A ・ W
PC
Collector dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
-55~150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Typ
-
Symbol
Parameter
Test condition
Unit
Max
Min
-60
-60
-5
V(BR)CEO C to E break down voltage
V(BR)CBO C to B break down voltage
V(BR)EBO E to B break down voltage
IC=-1mA, IB=0
-
-
V
V
IC=-10uA, IE=0
-
IE=-10uA, IC=0
-
-
V
ICBO
IEBO
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
VCB=-50V, IE=0
-
-
-0.1
-0.1
300
-0.4
-1.3
-
uA
uA
-
V
VEB=-3V, IC=0
-
-
hFE
IC=-150mA, VCE=-10V
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
IE=50mA, VCE=-20V,f=100MHz
VCB=-10V, f=1MHz
100
-
-
VCE(sat)
VBE(sat)
fT
-
-
-
V
200
-
-
MHz
pF
Cob
-
8
ISAHAYA ELECTRONICS CORPORATION