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ISA2166AU1 PDF预览

ISA2166AU1

更新时间: 2024-11-20 12:31:15
品牌 Logo 应用领域
谏早电子 - ISAHAYA 驱动
页数 文件大小 规格书
4页 158K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

ISA2166AU1 数据手册

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ISA2166AU1  
PRELIMINARY  
This datasheet is possibility of change.  
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION  
Because this device is developing now.  
SILICON PNP EPITAXIAL TYPE  
Unit:mm  
OUTLINE DRAWING  
DESCRIPTION  
1.5  
0.8  
ISA2166AU1 is a silicon PNP epitaxial type transistor  
Designed with high collector current, low VCE(sat).  
0.35  
0.35  
FEATURE  
●High collector current  
I
C(MAX)=-500mA  
●Low collector to emitter saturation voltage  
VCE(sat)<-0.4Vmax(IC=-150mA, IB=-15mA)  
APPLICATION  
TERMINAL CONNECTOR  
①:BASE  
②:EMITTER  
For switching application, small type motor drive application.  
JEITA:SC-75A  
JEDEC: -  
③:COLLECTOR  
MAXIMUM RATINGS(Ta=25℃)  
MARKING  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Ratings  
-60  
Unit  
V
Collector to Emitter voltage  
Collector to Base voltage  
Emitter to Base voltage  
Collector current  
Type Name  
-60  
V
-5  
V
-500  
150  
mA  
mW  
A ・ W  
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test condition  
Unit  
Max  
Min  
-60  
-60  
-5  
V(BR)CEO C to E break down voltage  
V(BR)CBO C to B break down voltage  
V(BR)EBO E to B break down voltage  
IC=-1mA, IB=0  
V
V
IC=-10uA, IE=0  
IE=-10uA, IC=0  
V
ICBO  
IEBO  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
C to E saturation voltage  
B to E saturation voltage  
Gain band width product  
Collector output capacitance  
VCB=-50V, IE=0  
-0.1  
-0.1  
300  
-0.4  
-1.3  
uA  
uA  
V
VEB=-3V, IC=0  
hFE  
IC=-150mA, VCE=-10V  
IC=-150mA, IB=-15mA  
IC=-150mA, IB=-15mA  
IE=50mA, VCE=-20V,f=100MHz  
VCB=-10V, f=1MHz  
100  
VCE(sat)  
VBE(sat)  
fT  
V
200  
MHz  
pF  
Cob  
8
ISAHAYA ELECTRONICS CORPORATION  

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